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Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal)

Nicolet, Marc-A. (2000) Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal). Vacuum, 59 (2-3). pp. 716-720. ISSN 0042-207X. https://resolver.caltech.edu/CaltechAUTHORS:20170816-155358775

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Abstract

After a brief historical introduction, the two main techniques used so far to synthesize TM–Si–N films are mentioned. Although principally developed and investigated for application to semiconductor devices, unanticipated alternative uses of TM–Si–N films have arisen. The most fully investigated alloy of the group is Ti–Si–N. Its known properties are reviewed. General trends are outlined that apply generally to all TM–Si–N alloys, with variations peculiar to each transition metal case. Other reactively sputtered ternary nitrogen compounds with related characteristics are also mentioned briefly, as well as the possibility to envisage analogous ternary alloys based on combinations of different elements.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1016/S0042-207X(00)00338-9DOIArticle
http://www.sciencedirect.com/science/article/pii/S0042207X00003389PublisherArticle
Additional Information:© 2000 Elsevier Science Ltd. Available online 25 September 2000.
Issue or Number:2-3
Record Number:CaltechAUTHORS:20170816-155358775
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170816-155358775
Official Citation:Marc-A Nicolet, Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal), Vacuum, Volume 59, Issues 2–3, November 2000, Pages 716-720, ISSN 0042-207X, https://doi.org/10.1016/S0042-207X(00)00338-9. (http://www.sciencedirect.com/science/article/pii/S0042207X00003389)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:80522
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:16 Aug 2017 23:06
Last Modified:03 Oct 2019 18:32

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