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Materials and process development for the fabrication of far ultraviolet device-integrated filters for visible-blind Si sensors

Hennessy, John and Jewell, April D. and Hoenk, Michael E. and Hitlin, David and McClish, Mickel and Carver, Alexander G. and Jones, Todd J. and Nikzad, Shouleh (2017) Materials and process development for the fabrication of far ultraviolet device-integrated filters for visible-blind Si sensors. In: Image Sensing Technologies: Materials, Devices, Systems, and Applications IV. Proceedings of SPIE. No.10209. Society of Photo-Optical Instrumentation Engineers (SPIE) , Bellingham, WA, Art. No. 102090P. ISBN 978-1-5106-0920-4. http://resolver.caltech.edu/CaltechAUTHORS:20170828-102633413

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Abstract

In this work, we show that the direct integration of ultraviolet metal-dielectric filters with Si sensors can improve throughput over external filter approaches, and yield devices with UV quantum efficiencies greater than 50%, with rejection ratios of visible light greater than 10^3. In order to achieve these efficiencies, two-dimensional doping methods are used to increase the UV sensitivity of back-illuminated Si sensors. Integrated filters are then deposited by a combination of Al evaporation and atomic layer deposition of dielectric spacer layers. At far UV wavelengths these filters require the use of non-absorbing dielectrics, and we have pursued the development of new atomic layer deposition processes for metal fluorides materials of MgF_2, AlF_3 and LiF. The performance of the complete multilayer filters on Si photodiodes and CCD imaging sensors, and the design and fabrication challenges associated with this development are demonstrated. This includes the continued development of deep diffused silicon avalanche photodiodes designed to detect the fast 220 nm emission component of barium fluoride scintillation crystals, while optically rejecting a slower component at 300 nm.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1117/12.2262786DOIArticle
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10209/102090P/Materials-and-process-development-for-the-fabrication-of-far-ultraviolet/10.1117/12.2262786.fullPublisherArticle
ORCID:
AuthorORCID
Jewell, April D.0000-0001-8834-3769
Hitlin, David0000-0003-4028-6982
Additional Information:© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE). The research described in this paper was carried out in part at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration. APD work was supported by a collaborative effort of Caltech, JPL, and RMD Inc., under SBIR grant DE-SC0011316, and by the Department of Energy. The authors wish to thank K. Balasubramanian at JPL for assistance with the FUV reflectance measurements.
Funders:
Funding AgencyGrant Number
Caltech/JPLUNSPECIFIED
RMD Inc.UNSPECIFIED
Department of Energy (DOE)DE-SC0011316
Subject Keywords:ultraviolet, silicon sensor, visible-blind, atomic layer deposition
Record Number:CaltechAUTHORS:20170828-102633413
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20170828-102633413
Official Citation:John Hennessy, April D. Jewell, Michael E. Hoenk, David Hitlin, Mickel McClish, Alexander G. Carver, Todd J. Jones, Shouleh Nikzad, "Materials and process development for the fabrication of far ultraviolet device-integrated filters for visible-blind Si sensors," Proc. SPIE 10209, Image Sensing Technologies: Materials, Devices, Systems, and Applications IV, 102090P (28 April 2017)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:80841
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:28 Aug 2017 20:35
Last Modified:28 Aug 2017 20:35

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