Zahler, James M. and Tanabe, Katsuaki and Ladous, Corinne and Pinnington, Tom and Newman, Frederick D. and Atwater, Harry A. (2007) High efficiency InGaAs solar cells on Si by InP layer transfer. Applied Physics Letters, 91 (1). Art. No. 012108. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:ZAHapl07
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Abstract
InP/Si substrates were fabricated through wafer bonding and helium-induced exfoliation of InP, and InGaAs solar cells lattice matched to bulk InP were grown on these substrates using metal-organic chemical-vapor deposition. The photovoltaic characteristics of the InGaAs cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epiready InP substrates, thus providing a demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications.
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| Additional Information: | © 2007 American Institute of Physics (Received 29 April 2007; accepted 11 June 2007; published online 3 July 2007) The authors would like to thank Anna Fontcuberta i Morral of the Walter Schottky Institute for her work in the development of the InP/Si substrate fabrication process. The work at Aonex Technologies was supported by a Small Business Innovation Research (SBIR) awarded and administered by the Air Force Research Laboratory (AFRL). The Caltech portion of this work was supported by the National Renewable Energy Laboratory. | ||||||
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| Subject Keywords: | indium compounds; gallium arsenide; III-V semiconductors; solar cells; wafer bonding; MOCVD | ||||||
| Issue or Number: | 1 | ||||||
| Record Number: | CaltechAUTHORS:ZAHapl07 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:ZAHapl07 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 8164 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 31 Jul 2007 | ||||||
| Last Modified: | 02 Oct 2019 23:48 |
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