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Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors

Fahad, Hossain Mohammad and Shiraki, Hiroshi and Amani, Matin and Zhang, Chuchu and Hebbar, Vivek Srinivas and Gao, Wei and Ota, Hiroki and Hettick, Mark and Kiriya, Daisuke and Chen, Yu-Ze and Chueh, Yu-Lun and Javey, Ali (2017) Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors. Science Advances, 3 (3). Art. No. e1602557. ISSN 2375-2548. PMCID PMC5365249.

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There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically conconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H_2S, H_2, and NO_2 at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors.

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URLURL TypeDescription Data CentralArticle
Gao, Wei0000-0002-8503-4562
Kiriya, Daisuke0000-0003-0270-3888
Javey, Ali0000-0001-7214-7931
Additional Information:2017 © The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). Submitted 18 October 2016. Accepted 9 February 2017. Published 24 March 2017. 10.1126/sciadv.1602557 We are grateful to K. Chen, S. B. Desai, A. B. Sachid, S.-Y. Cho, T. Rembert, H. Y. Y. Nyein, and J. Bullock for their help and useful comments. We are grateful to C. C. Hu for the insightful discussions in developing the underlying silicon transistor. We thank Emerson/Rosemount for valuable feedback on CS-FET sensor characterization. We also thank the Marvell Nanofabrication Laboratory staff for their help and suggestions. Funding: This work was jointly funded by the U.S. NSF (PFI:AIR-TT program), Chevron Corporation, and Murata Manufacturing Company Limited. Y.-L.C. was funded by the Ministry of Science and Technology (grants 105-3113-E-007-003-CC2, 104-2628-M-007-004-MY3, 104-2221-E-007-048-MY3, 105-2633-M-007-003, and 104-2622-M-007-002-CC2) and the National Tsing Hua University (grant 105A0088J4). Author contributions: A.J. conceived and supervised the project. H.M.F. led the project. H.M.F. and H.S. equally carried out all fabrication and characterization of CS-FET sensors. M.A. helped with the data acquisition setup. H.M.F. and H.S. designed the gas sensor characterization setup with help from M.H. and H.O. C.Z. and V.S.H. carried out the microdrone experiment. W.G. and D.K. helped with the sensing layer development. Y.-Z.C. and Y.-L.C. helped with top-down TEM characterization of the Pd-Au sensing layer. All the authors discussed the results and wrote the paper. Competing interests: The authors declare that they have no competing interests. Data and materials availability: H.F., H.S., and A.J. filed a patent related to this work with the University of California, Berkeley, through the U.S. Patents Office application PCT/US2015/034068 (filing date, 03 June 2015). All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials. Additional data related to this paper may be requested from the authors.
Funding AgencyGrant Number
Chevron CorporationUNSPECIFIED
Murata Manufacturing Company LimitedUNSPECIFIED
Ministry of Science and Technology (Taipei)105-3113-E-007-003-CC2
Ministry of Science and Technology (Taipei)104-2628-M-007-004-MY3
Ministry of Science and Technology (Taipei)104-2221-E-007-048-MY3
Ministry of Science and Technology (Taipei)105-2633-M-007-003
Ministry of Science and Technology (Taipei)104-2622-M-007-002-CC2
National Tsing Hua University105A0088J4
Issue or Number:3
PubMed Central ID:PMC5365249
Record Number:CaltechAUTHORS:20170921-091115446
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Official Citation:H. M. Fahad, H. Shiraki, M. Amani, C. Zhang, V. S. Hebbar, W. Gao, H. Ota, M. Hettick, D. Kiriya, Y.-Z. Chen, Y.-L. Chueh, A. Javey, Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors. Sci. Adv. 3, e1602557 (2017).
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:81666
Deposited By: Ruth Sustaita
Deposited On:21 Sep 2017 17:50
Last Modified:09 Mar 2020 13:18

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