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General Thermal Texturization Process of MoS_2 for Efficient Electrocatalytic Hydrogen Evolution Reaction

Kiriya, Daisuke and Lobaccaro, Peter and Nyein, Hnin Yin Yin and Taheri, Peyman and Hettick, Mark and Shiraki, Hiroshi and Sutter-Fella, Carolin M. and Zhao, Peida and Gao, Wei and Maboudian, Roya and Ager, Joel W. and Javey, Ali (2016) General Thermal Texturization Process of MoS_2 for Efficient Electrocatalytic Hydrogen Evolution Reaction. Nano Letters, 16 (7). pp. 4047-4053. ISSN 1530-6984. https://resolver.caltech.edu/CaltechAUTHORS:20170922-093800265

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Abstract

Molybdenum disulfide (MoS_2) has been widely examined as a catalyst containing no precious metals for the hydrogen evolution reaction (HER); however, these examinations have utilized synthesized MoS_2 because the pristine MoS_2 mineral is known to be a poor catalyst. The fundamental challenge with pristine MoS_2 is the inert HER activity of the predominant (0001) basal surface plane. In order to achieve high HER performance with pristine MoS_2, it is essential to activate the basal plane. Here, we report a general thermal process in which the basal plane is texturized to increase the density of HER-active edge sites. This texturization is achieved through a simple thermal annealing procedure in a hydrogen environment, removing sulfur from the MoS_2 surface to form edge sites. As a result, the process generates high HER catalytic performance in pristine MoS_2 across various morphologies such as the bulk mineral, films composed of micron-scale flakes, and even films of a commercially available spray of nanoflake MoS_2. The lowest overpotential (η) observed for these samples was η = 170 mV to obtain 10 mA/cm_2 of HER current density.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/acs.nanolett.6b00569DOIArticle
http://pubs.acs.org/doi/suppl/10.1021/acs.nanolett.6b00569PublisherSupporting Information
ORCID:
AuthorORCID
Kiriya, Daisuke0000-0003-0270-3888
Gao, Wei0000-0002-8503-4562
Maboudian, Roya0000-0002-5121-6560
Ager, Joel W.0000-0001-9334-9751
Javey, Ali0000-0001-7214-7931
Alternate Title:General Thermal Texturization Process of MoS2 for Efficient Electrocatalytic Hydrogen Evolution Reaction
Additional Information:© 2016 American Chemical Society. Received 9 February 2016. Published online 20 June 2016. Published in print 13 July 2016. XPS, SEM, XRD, and the final electrochemical characterization work was performed in collaboration with the Joint Center for Artificial Photosynthesis (JCAP), a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award Number DE-SC0004993. Processing and initial electrochemical characterization were performed in the Electronic Materials Program, which is supported by Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. TEM work was performed in collaboration with Mary Scott at the Molecular Foundry, which is supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.
Group:JCAP
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0004993
Department of Energy (DOE)DE-AC02-05CH11231
Issue or Number:7
Record Number:CaltechAUTHORS:20170922-093800265
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20170922-093800265
Official Citation:General Thermal Texturization Process of MoS2 for Efficient Electrocatalytic Hydrogen Evolution Reaction Daisuke Kiriya, Peter Lobaccaro, Hnin Yin Yin Nyein, Peyman Taheri, Mark Hettick, Hiroshi Shiraki, Carolin M. Sutter-Fella, Peida Zhao, Wei Gao, Roya Maboudian, Joel W. Ager, and Ali Javey Nano Letters 2016 16 (7), 4047-4053 DOI: 10.1021/acs.nanolett.6b00569
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:81739
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:22 Sep 2017 16:59
Last Modified:07 Jul 2020 20:26

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