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Modeling thermal conductivity in silicon nanowires

Martin, C. S. and Ariza, M. P. and Ortiz, M. (2015) Modeling thermal conductivity in silicon nanowires. GAMM-Mitteilungen, 38 (2). pp. 201-212. ISSN 0936-7195. http://resolver.caltech.edu/CaltechAUTHORS:20171117-150333066

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Abstract

The complexity of heat transport in silicon nanowires (SiNWs) and, specifically, its dependence on temperature and the nanowire diameter, is beyond continuum models of heat conduction and necessitate consideration of atomic-level heat-conduction models. In this work, we specifically aim to ascertain the ability of models based on non-equilibrium statistical mechanics to reproduce the observed anisotropy, temperature and size dependence of the thermal conductivity of SiNWs. In this approach, the atomic-level kinetic relations are regarded as empirical and subject to modeling. Within this framework, we find that a simple model, based on the introduction of a thin amorphous layer at the surface of the SiNWs, yields effective thermal conductivities that are in excellent agreement with the experimental data over a range of temperatures and diameters.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://dx.doi.org/10.1002/gamm.201510011DOIArticle
http://onlinelibrary.wiley.com/doi/10.1002/gamm.201510011/abstractPublisherArticle
Additional Information:© 2015 WILEY-VCH. Received 18 May 2015, revised 9 June 2015, accepted 6 July 2015. Published online 3 September 2015. C. S. M. and M. P. A. gratefully acknowledge the support of the Ministerio de Economía y Competitividad of Spain (DPI2012-32508). M. O. gratefully acknowledges support from the U. S. Army Research Laboratory (ARL) through the Materials in Extreme Dynamic Environments (MEDE) Collaborative Research Alliance (CRA) under Award Number W911NF-11-R-0001. C. S. M. also acknowledges fellowship support from Ministerio de Economía y Competitividad of Spain (BES-2013-066591).
Group:GALCIT
Funders:
Funding AgencyGrant Number
Ministerio de Economía y Competitividad (MINECO)DPI2012-32508
Army Research Office (ARO)W911NF-11-R-0001
Ministerio de Economía y Competitividad (MINECO)BES-2013-066591
Subject Keywords:Meanfield theory, non-equilibrium statistical thermodynamics, slow kinetic processes, thermal conductivity, semiconductor nanowire
Record Number:CaltechAUTHORS:20171117-150333066
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20171117-150333066
Official Citation:Martin, C. S., Ariza, M. P. and Ortiz, M. (2015), Modeling thermal conductivity in silicon nanowires. GAMM-Mitteilungen, 38: 201–212. doi:10.1002/gamm.201510011
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:83303
Collection:CaltechAUTHORS
Deposited By: Lydia Suarez
Deposited On:20 Nov 2017 23:31
Last Modified:20 Nov 2017 23:31

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