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Nanovoid Cavitation by Dislocation Emission in Aluminum

Marian, Jaime and Knap, Jaroslaw and Ortiz, Michael (2004) Nanovoid Cavitation by Dislocation Emission in Aluminum. Physical Review Letters, 93 (16). Art. no. 165503. ISSN 0031-9007. doi:10.1103/PhysRevLett.93.165503.

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This Letter is concerned with the determination of the transition paths attendant to nanovoid growth in aluminum under hydrostatic tension. The analysis is, therefore, based on energy minimization at 0 K. Aluminum is modeled by the Ercolessi-Adams embedded-atom method, and spurious boundary artifacts are mitigated by the use of the quasicontinuum method. Our analysis reveals several stages of pressure buildup separated by yield points. The first yield point corresponds to the formation of highly stable tetrahedral dislocation junctions around the surfaces of the void. The second yield point is caused by the dissolution of the tetrahedral structures and the emission of conventional 1/2 ⟨110⟩{111} and anomalous 1/2 ⟨110⟩{001} dislocation loops.

Item Type:Article
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Ortiz, Michael0000-0001-5877-4824
Additional Information:© 2004 American Physical Society. (Received 22 March 2004; published 14 October 2004) Support from the DOE through Caltech’s ASCI/ASAP Center for the Simulation of the Dynamic Response of Solids is gratefully acknowledged.
Funding AgencyGrant Number
Department of Energy (DOE)UNSPECIFIED
Issue or Number:16
Classification Code:PACS numbers: 61.72.–y, 02.70.–c, 46.15.–x
Record Number:CaltechAUTHORS:20171128-113716219
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Official Citation:Nanovoid Cavitation by Dislocation Emission in Aluminum Jaime Marian, Jaroslaw Knap, and Michael Ortiz Phys. Rev. Lett. 93, 165503
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:83520
Deposited By: Lydia Suarez
Deposited On:28 Nov 2017 22:13
Last Modified:15 Nov 2021 20:11

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