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Through-Silicon-Vias (TSVs) for 3D readout of ASIC for nearly gapless CdZnTe detector arrays

Hong, Jaesub and Allen, Branden and Grindlay, Jonathan and Miyasaka, Hiromasa and Burnham, Jill and Hong, Sankgi and Lei, Wesker and Barthelmy, Scott and Patti, Robert and Harrison, Fiona (2017) Through-Silicon-Vias (TSVs) for 3D readout of ASIC for nearly gapless CdZnTe detector arrays. In: Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIX. Proceedings of SPIE. No.10392. Society of Photo-Optical Instrumentation Engineers , Bellingham, WA, Art. No. 103920U. http://resolver.caltech.edu/CaltechAUTHORS:20180108-153821651

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Abstract

Wirebonds, although proven for space application and perceived necessary for hybrid sensors like CdZnTe (CZT) detectors, introduce assembly complexity and undesirable gaps between detector units. Thus, they pose a serious challenge in building a low cost large area detector. We are developing Through-Silicon Vias (TSVs) to make all connections (both power and data) through ASICs, which will eliminate wirebonds and enable simple direct flip-chip bonding between the ASIC and a substrate electronics layer. TSVs also enable a more compact layout of the ASIC, which reduces the inactive area of the detector plane, and thus enables nearly gaplessly tilable detector arrays. We demonstrate the first successful TSV implementation on ASICs used for CZT detectors onboard the Nuclear Spectroscopic Telescope Array (NuSTAR) mission as part of our program to develop large area CZT imagers for wide field coded aperture imaging.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1117/12.2274360DOIArticle
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10392/2274360/Through-Silicon-Vias-TSVs-for-3D-readout-of-ASIC-for/10.1117/12.2274360.fullPublisherArticle
ORCID:
AuthorORCID
Harrison, Fiona0000-0003-2992-8024
Additional Information:© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE).
Group:Space Radiation Laboratory, NuSTAR
Subject Keywords:Coded-aperture imaging, X-ray survey, Gamma-ray Burst, CdZnTe detectors
Record Number:CaltechAUTHORS:20180108-153821651
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20180108-153821651
Official Citation:J. Hong, B. Allen, J. Grindlay, Hiromasa Miyasaka, Jill Burnham, Sangki Hong, Wesker Lei, Scott Barthelmy, Robert Patti, Fiona Harrison, "Through-Silicon-Vias (TSVs) for 3D readout of ASIC for nearly gapless CdZnTe detector arrays", Proc. SPIE 10392, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIX, 103920U (15 September 2017); doi: 10.1117/12.2274360; http://dx.doi.org/10.1117/12.2274360
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:84177
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:09 Jan 2018 00:43
Last Modified:09 Jan 2018 00:43

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