CaltechAUTHORS
  A Caltech Library Service

Characterization of the HEFT CdZnTe pixel detectors

Chen, C. M. Hubert and Cook, Walter R. and Harrison, Fiona A. and Lin, Jiao Y. Y. and Mao, Peter H. and Schindler, Stephen M. (2004) Characterization of the HEFT CdZnTe pixel detectors. In: Hard X-Ray and Gamma-Ray Detector Physics V. Proceedings of SPIE. No.5198. Society of Photo-Optical Instrumentation Engineers , Bellingham, WA, pp. 9-18. http://resolver.caltech.edu/CaltechAUTHORS:20180109-153136001

[img] PDF - Published Version
See Usage Policy.

515Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20180109-153136001

Abstract

We have developed large format CdZnTe pixel detectors optimized for astrophysical applications. The detectors, designed for the High Energy Focusing Telescope (HEFT) balloon experiment, each consists of an array of 24x44 pixels, on a 498 μm pitch. Each of the anode segments on a CdZnTe sensor is bonded to a custom, low-noise application-specific integrated circuit (ASIC)optimized to achieve low threshold and good energy resolution. We have studied detectors fabricated by two different bonding methods and corresponding anode plane designs---the first detector has a steering electrode grid, and is bonded to the ASIC with indium bumps; the second detector has no grid but a narrower gap between anode contacts, and is bonded to the ASIC with conductive epoxy bumps and gold stud bumps in series. In this paper, we present results from detailed X-ray testing of the HEFT pixel detectors. This includes measurements of the energy resolution for both single-pixel and split-pixel events, and characterization of the effects of charge trapping, electrode biases and temperature on the spectral performance. Detectors from the two bonding methods are contrasted.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1117/12.506075DOIArticle
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5198/1/Characterization-of-the-HEFT-CdZnTe-pixel-detectors/10.1117/12.506075.fullPublisherArticle
ORCID:
AuthorORCID
Harrison, Fiona A.0000-0003-2992-8024
Lin, Jiao Y. Y.0000-0001-9233-0100
Additional Information:© 2004 Society of Photo-Optical Instrumentation Engineers (SPIE). This research was supported by the NASA Space Science "Supporting Research and Technology" (SR&T) programme under Grant Number NAG5-5398. FAH was further supported by a Presidential Early Career Award, Grant Number NAG5-5322. JL was supported by the National Science Foundation under Grant Number DMR-020-4920. We are grateful for their support. We also thank Aleksey E Bolotnikov for sharing his invaluable experiences with CdZnTe detector testing. Jill Burnham, Branislav Kecman and John Klemic have played crucial roles in the fabrication and testing of the detectors.
Group:Space Radiation Laboratory
Funders:
Funding AgencyGrant Number
NASANAG5-5398
NASANAG5-5322
NSFDMR-0204920
Subject Keywords:CdZnTe radiation detectors, conductive epoxy, flip-chip devices, indium bump-bonding, radiation detector circuits, sample and hold circuits, semiconductor device bonding, X-ray astronomy detectors
Record Number:CaltechAUTHORS:20180109-153136001
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20180109-153136001
Official Citation:C. M. Hubert Chen, Walter R Cook, Fiona A Harrison, Jiao Y Y Lin, Peter H Mao, Stephen M Schindler, "Characterization of the HEFT CdZnTe pixel detectors", Proc. SPIE 5198, Hard X-Ray and Gamma-Ray Detector Physics V, (20 January 2004); doi: 10.1117/12.506075; http://dx.doi.org/10.1117/12.506075
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:84207
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:10 Jan 2018 00:09
Last Modified:10 Jan 2018 00:09

Repository Staff Only: item control page