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X-ray reflectivity and mechanical stress in W/Si multilayers deposited on thin substrates of glass, epoxy-replicated aluminum foil, and Si wafer

Platonov, Yuriy Ya. and Broadway, David and DeGroot, Brian and Mao, Peter and Harrison, Fiona and Gutman, George and Rodriguez, Jim (1997) X-ray reflectivity and mechanical stress in W/Si multilayers deposited on thin substrates of glass, epoxy-replicated aluminum foil, and Si wafer. In: Grazing Incidence and Multilayer X-Ray Optical Systems. Proceedings of SPIE. No.3113. Society of Photo-Optical Instrumentation Engineers , Bellingham, WA, pp. 469-475. ISBN 9780819425355. https://resolver.caltech.edu/CaltechAUTHORS:20180110-155845578

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Abstract

Reflectivity at λ = 0.154 nm and mechanical stress in the bulk thin films of tungsten and silicon and single d- spacing multilayers on their basis with d approximately equals 2.8 nm deposited by the magnetron sputtering technique on flat thin substrates of Si wafer (~ 0.2 mm), glass (~ 0.3 mm), and epoxy gold replicated aluminum foil (~ 0.3 mm) have been studied. The interfacial roughness of the multilayers has been calculated from the x- ray reflectivity curves as the following: on Si wafer σ ≃ 0.31 nm, on glass σ ≃ 0.32 nm, and on foil σ ≃ 0.34 nm. There was not observed a significant dependence on the stress in the Si film with change in rf power, Ar gas pressure and biasing. For the W films an increase of dc power results in an increase of stress. A similar relationship is also evident for W films deposited by rf power, but this dependence is less pronounced. The influence of low temperature (up to 200 °C) annealing on x-ray reflectivity and stress in the multilayers has been investigated. There was not found an appreciable changes in the absolute value of reflectivity or in d-spacing with annealing temperature. The stress in the coatings changes with annealing temperature from compressive to tensile. There was observed a temperature of annealing at which the stress is no longer present in the film. The absolute value of this temperature measured for W/Si multilayer is approximately 120 °C.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1117/12.278878DOIArticle
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/3113/1/X-ray-reflectivity-and-mechanical-stress-in-W-Si-multilayers/10.1117/12.278878.fullPublisherArticle
ORCID:
AuthorORCID
Harrison, Fiona0000-0003-2992-8024
Additional Information:© 1997 Society of Photo-Optical Instrumentation Engineers (SPIE). We wish to express our gratitude to Chuck Hailey and Bill Craig from Columbia University for supplying the qualified thin glass and epoxy gold replicated aluminum foil substrates and to Boris Vernian, Licai Jiang and Bongly Kim from Osmic, inc. for help in radius curvature measurements. This work was performed under SBIR Phase II Contract No. NAS8-970l6.
Group:Space Radiation Laboratory
Funders:
Funding AgencyGrant Number
NASANAS8-97016
Subject Keywords:multilayer structure, X-rays, magnetron sputtering deposition, thin films, mechanical stress, thin substrates, epoxy gold replicated foil, thin glass, thermal annealing, X-ray reflectivity, interfacial roughness
Series Name:Proceedings of SPIE
Issue or Number:3113
Record Number:CaltechAUTHORS:20180110-155845578
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20180110-155845578
Official Citation:Yuriy Ya. Platonov, David M. Broadway, Brian DeGroot, Peter H. Mao, Fiona A. Harrison, George Gutman, James Rodriguez, "X-ray reflectivity and mechanical stress in W/Si multilayers deposited on thin substrates of glass, epoxy-replicated aluminum foil, and Si wafer", Proc. SPIE 3113, Grazing Incidence and Multilayer X-Ray Optical Systems, (11 July 1997); doi: 10.1117/12.278878; http://dx.doi.org/10.1117/12.278878
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:84239
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:11 Jan 2018 16:29
Last Modified:03 Oct 2019 19:16

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