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Imaging carrier dynamics on the surface of the N-type silicon

Najafi, Ebrahim (2017) Imaging carrier dynamics on the surface of the N-type silicon. In: Ultrafast Nonlinear Imaging and Spectroscopy V. Proceedings of SPIE. No.10380. Society of Photo-Optical Instrumentation Engineers , Bellingham, WA, Art. No. 103800E. ISBN 9781510612174. http://resolver.caltech.edu/CaltechAUTHORS:20180111-134219949

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Abstract

The nonequilibrium dynamics of carriers in semiconductors plays a major role in the performance and efficiency of the electronic and photovoltaic devices. In this study, we use the scanning ultrafast electron microscopy (SUEM) technique to study the surface photovoltage dynamics in doped silicon samples. We observe that the optical excitation of lightly doped n-type and p-type silicon as well as heavily doped n-type silicon increases the electron density on the surface. In contrast, the optical excitation of heavily doped p-type silicon increases the hole density on the surface. Furthermore, we show that the rise and the decay timescales of these events strongly depend on the doping concentration.


Item Type:Book Section
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http://dx.doi.org/10.1117/12.2275629DOIArticle
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10380/2275629/Imaging-carrier-dynamics-on-the-surface-of-the-N-type/10.1117/12.2275629.fullPublisherArticle
Additional Information:© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE).
Record Number:CaltechAUTHORS:20180111-134219949
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20180111-134219949
Official Citation:Ebrahim Najafi, "Imaging carrier dynamics on the surface of the N-type silicon", Proc. SPIE 10380, Ultrafast Nonlinear Imaging and Spectroscopy V, 103800E (7 September 2017); doi: 10.1117/12.2275629; http://dx.doi.org/10.1117/12.2275629
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:84267
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:11 Jan 2018 23:18
Last Modified:29 Jun 2018 18:30

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