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Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers

Wang, Huolei and Kim, Dongwan and Harfouche, Mark and Santis, Christos T. and Satyan, Naresh and Rakuljic, George and Yariv, Amnon (2017) Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers. IEEE Photonics Technology Letters, 29 (24). pp. 2199-2202. ISSN 1041-1135. http://resolver.caltech.edu/CaltechAUTHORS:20180119-130456430

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Abstract

We demonstrate a narrow-linewidth heterogeneously integrated Si/III-V laser, where the current confinement in the III-V structure is obtained by oxide isolation rather than by the prevailing ion-implantation technique. This method provides effective electrical isolation as well as III-V surface passivation, and a pathway for high-efficiency diode injection laser performance. This method also offers increased compatibility with potentially high-temperature annealing processes. The lasers shown here possess a threshold current of as low as 60 mA and a single-facet output power of more than 3 mW at 20 °C. A linewidth of 28 kHz at 1574.8 nm is obtained at a current of 200 mA (I = 3.3 × I_(th)). Single-mode operation is achieved with a side-mode suppression ratio larger than 55 dB.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/LPT.2017.2771222DOIArticle
http://ieeexplore.ieee.org/document/8101530/PublisherArticle
ORCID:
AuthorORCID
Wang, Huolei0000-0001-6245-8090
Kim, Dongwan0000-0002-5661-2503
Harfouche, Mark0000-0002-4657-4603
Additional Information:© 2017 IEEE. Manuscript received August 23, 2017; revised October 31, 2017; accepted November 3, 2017. Date of publication November 8, 2017; date of current version November 17, 2017. This work was supported in part by DARPA MTO under Grant N66001-14-1-4062, and in part by the U.S. Army Research Office under Grant W911NF-16-C-0026 and Grant W911NF-14-P-0020. The authors would like to acknowledge technical and fabrication infrastructure support from the Kavli Nanoscience Institute at the California Institute of Technology.
Group:Kavli Nanoscience Institute
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)N66001-14-1-4062
Army Research Office (ARO)W911NF-16-C-0026
Army Research Office (ARO)W911NF-14-P-0020
Subject Keywords:Hybrid integrated, silicon photonics, optical device fabrication, narrow linewidth, semiconductor lasers.
Record Number:CaltechAUTHORS:20180119-130456430
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20180119-130456430
Official Citation:H. Wang et al., "Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers," in IEEE Photonics Technology Letters, vol. 29, no. 24, pp. 2199-2202, Dec.15, 15 2017. doi: 10.1109/LPT.2017.2771222
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:84426
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:19 Jan 2018 21:34
Last Modified:19 Jan 2018 21:34

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