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Charge retention characteristics of silicon nanocrystal layers by ultrahigh vacuum atomic force microscopy

Feng, Tao and Miller, Gerald and Atwater, Harry A. (2007) Charge retention characteristics of silicon nanocrystal layers by ultrahigh vacuum atomic force microscopy. Journal of Applied Physics, 102 (3). Art. No. 034305. ISSN 0021-8979. https://resolver.caltech.edu/CaltechAUTHORS:FENjap07

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Abstract

The nanoscale charge retention characteristics of both electrons and holes in SiO2 layers containing silicon nanocrystals were investigated with ultrahigh vacuum conductive-tip noncontact atomic force microscopy. The results revealed much longer hole retention time (e.g., >1 day) than that of electrons (e.g., ~1 h). A three-dimensional electrostatic model was developed for charge quantification and analysis of charge dissipation. Based on the superior retention characteristics of holes, a p-channel nanocrystal memory working with holes is suggested to be an interesting choice in improving data retention or in further device scaling.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.2764001DOIUNSPECIFIED
ORCID:
AuthorORCID
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2007 American Institute of Physics (Received 1 March 2007; accepted 13 June 2007; published online 8 August 2007)
Subject Keywords:atomic force microscopy; charge injection; elemental semiconductors; ion implantation; nanostructured materials; silicon
Issue or Number:3
Record Number:CaltechAUTHORS:FENjap07
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:FENjap07
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8443
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:13 Aug 2007
Last Modified:02 Oct 2019 23:51

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