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Magnetotransport properties of strained Ga0.95Mn0.05As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory

Honolka, J. and Masmanidis, S. and Tang, H. X. and Awschalom, D. D. and Roukes, M. L. (2007) Magnetotransport properties of strained Ga0.95Mn0.05As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory. Physical Review B, 75 (24). Art. No. 245310. ISSN 1098-0121. doi:10.1103/PhysRevB.75.245310. https://resolver.caltech.edu/CaltechAUTHORS:HONprb07b

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Abstract

The magnitude of the anisotropic magnetoresistance (AMR) and the longitudinal resistance in compressively strained Ga0.95Mn0.05As epilayers were measured down to temperatures as low as 30 mK. Below temperatures of 3 K, the conductivity decreases [proportional]T^1/3 over 2 orders of magnitude in temperature. The conductivity can be well described within the framework of a three-dimensional scaling theory of Anderson's transition in the presence of spin scattering in semiconductors. It is shown that the samples are on the metallic side but very close to the metal-insulator transition. At lowest temperatures, a decrease in the AMR effect is observed, which is assigned to changes in the coupling between the remaining itinerant carriers and the local Mn 5/2-spin moments.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1103/PhysRevB.75.245310DOIUNSPECIFIED
ORCID:
AuthorORCID
Roukes, M. L.0000-0002-2916-6026
Additional Information:© 2007 The American Physical Society (Received 7 March 2007; revised 11 April 2007; published 7 June 2007) This research was supported by the DARPA/SPINS program and the Deutsche Forschungsgemeinschaft. We want to thank P. Wigen and A.H. MacDonald for valuable discussions.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Deutsche Forschungsgemeinschaft (DFG)UNSPECIFIED
Subject Keywords:gallium arsenide; III-V semiconductors; manganese compounds; magnetoresistance; electrical conductivity
Issue or Number:24
DOI:10.1103/PhysRevB.75.245310
Record Number:CaltechAUTHORS:HONprb07b
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:HONprb07b
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8481
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:15 Aug 2007
Last Modified:08 Nov 2021 20:50

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