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Silicon Nanowires: Preparation, Device Fabrication, and Transport Properties

Yu, Jae-Young and Chung, Sung-Wook and Heath, James R. (2000) Silicon Nanowires: Preparation, Device Fabrication, and Transport Properties. Journal of Physical Chemistry B, 104 (50). pp. 11864-11870. ISSN 1520-6106. http://resolver.caltech.edu/CaltechAUTHORS:20180302-111259764

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Abstract

The preparation of 20 ± 5 nm diameter Si nanowires and the electrical characterization of Si nanowire devices are presented. The nanowires were grown at 450−500 °C on solid substrates via the vapor−liquid−solid mechanism using Au or Zn nucleation catalysts and SiH4 as the silicon source. The wires were investigated by high-resolution transmission electron microscopy. Two types of wires were found, as characterized by different growth directions (〈111̄〉 and 〈211〉). Several types of devices, including crossed nanowire devices, four- and six-terminal devices, and three-terminal (gated) devices, were fabricated. For certain devices, various electrode compositions were also studied. The measured resistivity of these nanowires was separated from the contact resistance and could be varied from >10^5 Ω cm to ∼10^(-3) Ω cm. The wide variation in resistivity was related to the nature of the electrical contact to the wires (Schottky or Ohmic) and to the doping level of the wires. Doping of the nanowires was performed by the thermal diffusion of metal catalyst into the nanowires at 750−850 °C. Au nucleated nanowires exhibited resistivity values much lower than those of similarly treated Zn nucleated nanowires. This result is attributed to the much larger relative solid solubility of gold in silicon.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/jp002595qDOIArticle
https://pubs.acs.org/doi/abs/10.1021/jp002595qPublisherArticle
ORCID:
AuthorORCID
Heath, James R.0000-0001-5356-4385
Additional Information:© 2000 American Chemical Society. Received 20 July 2000. Published online 23 November 2000. Published in print 1 December 2000. The authors thank Ted I. Kamins for helpful discussions. This work was funded by the ONR (Grant N00014-98-1-0422) and DARPA.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)N00014-98-1-0422
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Record Number:CaltechAUTHORS:20180302-111259764
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20180302-111259764
Official Citation:Silicon Nanowires:  Preparation, Device Fabrication, and Transport Properties Jae-Young Yu, Sung-Wook Chung, and James R. Heath The Journal of Physical Chemistry B 2000 104 (50), 11864-11870 DOI: 10.1021/jp002595q
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:85064
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:02 Mar 2018 21:43
Last Modified:02 Mar 2018 21:43

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