Lee, C. P. and Samid, I. and Gover, A. and Yariv, A. (1976) Low-threshold room-temperature embedded heterostructure lasers. Applied Physics Letters, 29 (6). pp. 365-367. ISSN 0003-6951. doi:10.1063/1.89081. https://resolver.caltech.edu/CaltechAUTHORS:LEEapl76
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Abstract
Room-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm^2 have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks.
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| Additional Information: | © 1976 American Institute of Physics. Received 4 June 1976. The authors are grateful to Eric Mott for the fabrication of the laser heat sinks. Work supported by the Office of Naval Research and by the National Science Foundation Optical Communication Program. | ||||||
| Subject Keywords: | SEMICONDUCTOR LASERS; THRESHOLD ENERGY; FABRICATION; EPITAXY; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; JUNCTION DIODES; EFFICIENCY | ||||||
| Issue or Number: | 6 | ||||||
| DOI: | 10.1063/1.89081 | ||||||
| Record Number: | CaltechAUTHORS:LEEapl76 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:LEEapl76 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 8626 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Tony Diaz | ||||||
| Deposited On: | 31 Aug 2007 | ||||||
| Last Modified: | 08 Nov 2021 20:51 |
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