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An X-Ray Photoelectron Spectroscopic and Chemical Reactivity Study of Routes to Functionalization of Etched InP Surfaces

Sturzenegger, Marcel and Lewis, Nathan S. (1996) An X-Ray Photoelectron Spectroscopic and Chemical Reactivity Study of Routes to Functionalization of Etched InP Surfaces. Journal of the American Chemical Society, 118 (12). pp. 3045-3046. ISSN 0002-7863. http://resolver.caltech.edu/CaltechAUTHORS:20180515-111735903

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Abstract

Although InP is widely used in optoelectronic applications, little is known about the surface chemistry of this important semiconductor. Modification of the InP surface is potentially important as a route to introduce functional groups for the stabilization of InP photoelectrodes,4 to control the surface recombination properties of InP-based electrical devices, to study electron transfer from a solid to a redox-active donor at a fixed distance from the solid, to control nucleation and growth of metals on semiconductors, and for use in optically linked chemical-sensing applications. To our knowledge, the only prior investigations of the derivatization of etched InP surfaces are the work of Gu et al., who coated the InP surface with overlayers of thiols through an unidentified binding mode, and that of Spool et al., who observed face-selective reactivity of InP with benzyl bromides and proposed that the reactivity of the P-rich, (111)B face of InP was dominated by the lone pairs of the terminal P surface atoms. We describe herein a new, apparently general strategy for functionalization of InP surfaces. We also present evidence that the reactions of this semiconductor surface are dominated by the reactivity of residual -OH functionalities on the InP surface.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1021/ja953691lDOIArticle
ORCID:
AuthorORCID
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 1996 American Chemical Society. Received November 2, 1995. Publication Date (Web): March 27, 1996. We acknowledge the Department of Energy, Office of Basic Energy Sciences, for support of this work. M.S. is grateful to the Swiss National Science Foundation for a postdoctoral fellowship.
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)UNSPECIFIED
Swiss National Science Foundation (SNSF)UNSPECIFIED
Record Number:CaltechAUTHORS:20180515-111735903
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20180515-111735903
Official Citation:An X-Ray Photoelectron Spectroscopic and Chemical Reactivity Study of Routes to Functionalization of Etched InP Surfaces. Marcel Sturzenegger and Nathan S. Lewis. Journal of the American Chemical Society 1996 118 (12), 3045-3046. DOI: 10.1021/ja953691l
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:86407
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:18 May 2018 18:21
Last Modified:18 May 2018 18:21

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