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Strain engineering of the silicon-vacancy center in diamond

Meesala, Srujan and Sohn, Young-Ik and Pingault, Benjamin and Shao, Linbo and Atikian, Haig A. and Holzgrafe, Jeffrey and Gündoğan, Mustafa and Stavrakas, Camille and Sipahigil, Alp and Chia, Cleaven and Evans, Ruffin and Burek, Michael J. and Zhang, Mian and Wu, Lue and Pacheco, Jose L. and Abraham, John and Bielejec, Edward and Lukin, Mikhail D. and Atatüre, Mete and Lončar, Marko (2018) Strain engineering of the silicon-vacancy center in diamond. Physical Review B, 97 (20). Art. No. 205444. ISSN 2469-9950. doi:10.1103/PhysRevB.97.205444.

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We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.

Item Type:Article
Related URLs:
URLURL TypeDescription Paper
Shao, Linbo0000-0002-0615-7848
Sipahigil, Alp0000-0003-1469-5272
Evans, Ruffin0000-0001-9090-6962
Zhang, Mian0000-0001-9838-3895
Wu, Lue0000-0002-7503-7057
Bielejec, Edward0000-0002-3386-5161
Lukin, Mikhail D.0000-0002-8658-1007
Additional Information:© 2018 American Physical Society. Received 8 February 2018; published 29 May 2018. This work was supported by STC Center for Integrated Quantum Materials (NSF Grant No. DMR-1231319), ONR MURI on Quantum Optomechanics (Award No. N00014-15-1-2761), NSF EFRI ACQUIRE (Award No. 5710004174), the University of Cambridge, the ERC Consolidator Grant PHOENICS, the EPSRC Quantum Technology Hub NQIT (EP/M013243/1), and the MIT-Harvard CUA. B.P. thanks Wolfson College (University of Cambridge) for support through a research fellowship. Device fabrication was performed in part at the Center for Nanoscale Systems (CNS), a member of the National Nanotechnology Infrastructure Network (NNIN), which is supported by the National Science Foundation under NSF Award No. ECS-0335765. CNS is part of Harvard University. Focused ion beam implantation was performed under the Laboratory Directed Research and Development Program at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-NA0003525. We thank D. Perry for performing the focused ion beam implantation, and M. W. Doherty for helpful discussions.
Group:Institute for Quantum Information and Matter
Funding AgencyGrant Number
Office of Naval Research (ONR)N00014-15-1-2761
University of CambridgeUNSPECIFIED
European Research Council (ERC)PHOENICS
Engineering and Physical Sciences Research Council (EPSRC)EP/M013243/1
Center for Ultracold Atoms (CUA)UNSPECIFIED
Department of Energy (DOE)DE-NA0003525
Issue or Number:20
Record Number:CaltechAUTHORS:20180529-090727339
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:86650
Deposited By: Tony Diaz
Deposited On:29 May 2018 16:26
Last Modified:15 Nov 2021 20:40

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