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Measurement of Barrier Heights of Semiconductor/Liquid Junctions Using a Transconductance Method: Evidence for Inversion at n-Si/CH_3OH-1,1'-Dimethylferrocene^(+/0) Junctions

Laibinis, Paul E. and Stanton, Colby E. and Lewis, Nathan S. (1994) Measurement of Barrier Heights of Semiconductor/Liquid Junctions Using a Transconductance Method: Evidence for Inversion at n-Si/CH_3OH-1,1'-Dimethylferrocene^(+/0) Junctions. Journal of Physical Chemistry, 98 (35). pp. 8765-8774. ISSN 0022-3654. https://resolver.caltech.edu/CaltechAUTHORS:20180601-161216529

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Abstract

Transconductance measurements have been used to characterize the space-charge regions of various n-Si/liquid contacts. To perform these measurements, Si electrodes were photolithographically processed to introduce p^+-contact areas into the surface of an n-type Si electrode. The electrical conductance between these p^+ regions was then used to probe the minority carrier concentration in the near-surface region of the n-type Si. Unlike conventional differential capacitance or current-voltage measurements, these transconductance measurements can be performed under near-equilibrium conditions and can be performed in the presence of gaseous ambients or when the sample is in contact with ionically conducting electrolyte solutions. In contact with the electrolyte solutions, faradaic and solid-state conduction pathways were distinguished using ac impedance measurements. The impedance spectra provided clear evidence that contact with Me_2Fc (1,1'-dimethylferrocene)^(+/0) and Fc^(+/0) redox couples in CH_3OH(l)-1.0 M LiClO_4 formed an inversion layer in the n-Si, but that CH_3OH(l)-1.0 M LiClO_4-Me_(10)Fc^(+/0) solutions did not yield an inversion layer. These observations are consistent with prior current-voltage measurements on these junctions. The barrier heights of the n-Si/CH_3OH-Me_2Fc^(+/0) and n-Si/CH_3OH-Fc^(+/0) junctions were determined to be 1.01 and 1.02 V, respectively. These measurements provide new insight into the photoelectrochemical behavior of SI/CH_3OH contacts and provide an alternate method for characterizing the energetics of semiconductor/liquid contacts.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://dx.doi.org/10.1021/j100086a029DOIArticle
ORCID:
AuthorORCID
Lewis, Nathan S.0000-0001-5245-0538
Alternate Title:Measurement of Barrier Heights of Semiconductor/Liquid Junctions Using a Transconductance Method: Evidence for Inversion at n-Si/CH3OH-1,1'-Dimethylferrocene+/0 Junctions
Additional Information:© 1994 American Chemical Society. Received: March 9, 1994; In Final Form: May 23, 1994. This research was supported by the National Science Foundation, Grant CHE-9221311. P.E.L. gratefully acknowledges the National Institutes of Health for a post-doctoral fellowship. We thank Prof. Harry Atwater of Caltech for the use of semiconductor fabrication facilities. This paper is contribution no. 8928 from the Division of Chemistry and Chemical Engineering at Caltech.
Funders:
Funding AgencyGrant Number
NSFCHE-9221311
NIH Postdoctoral FellowshipUNSPECIFIED
Other Numbering System:
Other Numbering System NameOther Numbering System ID
Division of Chemistry and Chemical Engineering8928
Issue or Number:35
Record Number:CaltechAUTHORS:20180601-161216529
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20180601-161216529
Official Citation:Measurement of Barrier Heights of Semiconductor/Liquid Junctions Using a Transconductance Method: Evidence for Inversion at n-Si/CH3OH-1,1'-Dimethylferrocene+/0 Junctions Paul E. Laibinis, Colby E. Stanton, and Nathan S. Lewis The Journal of Physical Chemistry 1994 98 (35), 8765-8774 DOI: 10.1021/j100086a029
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:86765
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:04 Jun 2018 15:12
Last Modified:03 Oct 2019 19:48

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