Full Ka-band High Performance InP MMIC LNA Module

Abstract

A 0.1-µm InP HEMT Ka-band LNA with high and flat gain, very low noise figure and low VSWR has been developed. Across the entire Ka-band, of 26 GHz to 40 GHz, the MMIC LNA demonstrated associated gain of 21.9 plusmn 0.9 dB and an average noise figure of 1.5 dB with a minimum of 1.3 dB at 34 GHz. The LNA chip was cryogenically cooled to 12 K where it exhibited an associated gain of 23.0 ± 1.1 dB and an average noise temperature of 15.5 K, i.e. 0.23-dB noise figure. Two LNA chips were cascaded and assembled into a module. At room temperature, the module achieved an associated gain of 37.6 dB ± 1.8 dB and an average noise figure of 1.3 dB. At 15 K, the average noise temperature was improved to 11.4 K with 41.0 ± 2.4 dB associated gain.