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Full Ka-band High Performance InP MMIC LNA Module

Tang, Yu-Lung and Wadefalk, Niklas and Morgan, Matthew A. and Weinreb, Sander (2006) Full Ka-band High Performance InP MMIC LNA Module. In: 2006 IEEE MTT-S International Microwave Symposium Digest. IEEE , Piscataway, NJ, pp. 81-84. ISBN 0-7803-9541-7. https://resolver.caltech.edu/CaltechAUTHORS:20180604-100204951

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Abstract

A 0.1-µm InP HEMT Ka-band LNA with high and flat gain, very low noise figure and low VSWR has been developed. Across the entire Ka-band, of 26 GHz to 40 GHz, the MMIC LNA demonstrated associated gain of 21.9 plusmn 0.9 dB and an average noise figure of 1.5 dB with a minimum of 1.3 dB at 34 GHz. The LNA chip was cryogenically cooled to 12 K where it exhibited an associated gain of 23.0 ± 1.1 dB and an average noise temperature of 15.5 K, i.e. 0.23-dB noise figure. Two LNA chips were cascaded and assembled into a module. At room temperature, the module achieved an associated gain of 37.6 dB ± 1.8 dB and an average noise figure of 1.3 dB. At 15 K, the average noise temperature was improved to 11.4 K with 41.0 ± 2.4 dB associated gain.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/MWSYM.2006.249933DOIArticle
ORCID:
AuthorORCID
Weinreb, Sander0000-0002-9353-6204
Additional Information:© 2006 IEEE.
Subject Keywords:MMIC, cryogenic, LNA, low noise amplifier, InP-based HEMT
Record Number:CaltechAUTHORS:20180604-100204951
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20180604-100204951
Official Citation:Y. l. Tang, N. Wadefalk, M. A. Morgan and S. Weinreb, "Full Ka-band High Performance InP MMIC LNA Module," 2006 IEEE MTT-S International Microwave Symposium Digest, San Francisco, CA, 2006, pp. 81-84. doi: 10.1109/MWSYM.2006.249933
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:86778
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:04 Jun 2018 18:10
Last Modified:08 Dec 2020 00:47

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