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Ultra Broadband Low Power MMIC Amplifier

Radisic, Vesna and Weinreb, Sander and Micovic, Miro and Hu, Ming and Janke, Paul and Ngo, Catherine and Harvey, Duane and Matloubian, Mehran and Nguyen, Loi (2000) Ultra Broadband Low Power MMIC Amplifier. In: 2000 30th European Microwave Conference. IEEE , Piscataway, NJ, pp. 1-4. ISBN 0 86213 212 6.

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A low power two-stage InP HEMT MMIC amplifier has been developed. The amplifier utilizes 0.12 μm T-gate InP HEMTs with 2×25 μm gate periphery. This compact microstrip MMIC is only 1.5 mm^2 in size. It exhibits gain of 12.5±1 dB at 15 mW of dissipated power over an operating range from 1 to 50 GHz. The gain-bandwidth/dissipation figure of merit is 40 dB GHz/mW. The average noise figure is 3 to 3.8 dB over the Ka band.

Item Type:Book Section
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Weinreb, Sander0000-0002-9353-6204
Additional Information:© 2000 IEEE.
Record Number:CaltechAUTHORS:20180604-104140329
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Official Citation:V. Radisic et al., "Ultra Broadband Low Power MMIC Amplifier," 2000 30th European Microwave Conference, Paris, France, 2000, pp. 1-4. doi: 10.1109/EUMA.2000.338730
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:86783
Deposited By: Tony Diaz
Deposited On:04 Jun 2018 18:09
Last Modified:15 Nov 2021 20:42

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