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Disordering of InGaAs/GaAs strained quantum well structures induced by rare gas ion implantation

Pellegrino, S. and Pignataro, C. and Caldironi, M. and Dellagiovanna, M. and Vidimari, F. and Carnera, A. and Gasparotto, A. (1994) Disordering of InGaAs/GaAs strained quantum well structures induced by rare gas ion implantation. In: Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits. Proceedings of SPIE. No.2150. Society of Photo-optical Instrumentation Engineers (SPIE) , Bellingham, WA, pp. 38-48. ISBN 081941445X. http://resolver.caltech.edu/CaltechAUTHORS:20180605-131242041

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Abstract

In this work we have investigated the effect of various implantation schemes on In(0.2)GaAs/GaAs/AlGaAs Single Quantum Well, where the implanted species are Argon and Helium, with doses in the range 1E12 to 1E14 at cm^2, at energy spanning 270 - 400 KeV and 30 to 50 KeV for Ar and He, respectively. Repetitive annealing processes were carried out between 735 and 870 degree(s)C and the interdiffusion was deduced by photoluminescence measurements. A maximum of 20 nm shift from He ion implanted Quantum Well with an high degree of reconstruction has been recorded, thus allowing the application of this disordering scheme for the realization of optoelectronic devices.


Item Type:Book Section
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https://doi.org/10.1117/12.175013DOIArticle
ORCID:
AuthorORCID
Pellegrino, S.0000-0001-9373-3278
Additional Information:© 1994 Society of Photo-Optical Instrumentation Engineers (SPIE). We are deeply indebt to Dr. C. Frigeri, MASPEC Parma, for TEN measurements and to Dr. A. DiPaola for continuous help during the work.
Group:GALCIT
Record Number:CaltechAUTHORS:20180605-131242041
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20180605-131242041
Official Citation:Sergio Pellegrino, C. Pignataro, Manuela Caldironi, M. Dellagiovanna, F. Vidimari, Alberto Carnera, A. Gasparotto, "Disordering of InGaAs/GaAs strained quantum well structures induced by rare gas ion implantation", Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); doi: 10.1117/12.175013; https://doi.org/10.1117/12.175013
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:86795
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:05 Jun 2018 20:51
Last Modified:05 Jun 2018 20:51

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