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High total dose tolerance of prototype silicon nanocrystal non-volatile memory cells

Petkov, Mihail P. and Bell, L. Douglas and Atwater, Harry A. (2004) High total dose tolerance of prototype silicon nanocrystal non-volatile memory cells. IEEE Transactions on Nuclear Science, 51 (6, pt.). pp. 3822-3826. ISSN 0018-9499. doi:10.1109/TNS.2004.839141.

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We report the first results pertinent to the high total dose tolerance of Si nanocrystal nonvolatile memory cells. The studied prototype nc-Si field effect transistors made by ion implantation retained virtually unchanged write/erase characteristics, typical for the two-state devices, to cumulative doses exceeding 15Mrad(Si).

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Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2004 IEEE. "Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.” Manuscript received July 20, 2004; revised September 1, 2004. Posted online: 2004-12-20. This work was supported by Intel, the Jet Propulsion Laboratory, California Institute of Technology under a contract with the National Aeronautics and Space Administration.
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Subject Keywords:Field effect transistors (FETs), nonvolatile memory (NVM)
Issue or Number:6, pt.
Record Number:CaltechAUTHORS:PETieeens04
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:873
Deposited By: Archive Administrator
Deposited On:31 Oct 2005
Last Modified:08 Nov 2021 19:05

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