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Band edge exciton in CdSe and other II-VI and III-V compound semiconductor nanocrystals -revisited

Sercel, Peter C. and Efros, Alexander L. (2018) Band edge exciton in CdSe and other II-VI and III-V compound semiconductor nanocrystals -revisited. Nano Letters, 18 (7). pp. 4061-4068. ISSN 1530-6984. http://resolver.caltech.edu/CaltechAUTHORS:20180622-084422162

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Abstract

In this Mini Review, we summarize major corrections to the dark–bright exciton theory [Efros et al.Phys. Rev B 1996, 54, 4843−4856], which should be used for quantitative description of the band edge exciton in II–VI and III–V compound quantum-dot nanocrystals (NCs). The theory previously did not take into account the long-range exchange interaction, resulting in the under-estimation of the splitting between the upper bright and lower dark or quasi-dark exciton, as reported by several experimental groups. Another type of correction originates from the closeness in energy of the ground, 1S_(3/2), and the first excited, 1P_(3/2), hole levels in a spherical NC, resulting in significant energetic overlap of the levels from the 1S_(3/2)1S_e and 1P_(3/2)1S_e exciton manifolds connected with the ground 1Se electron level. The thermal occupation of the optically forbidden 1P_(3/2)1S_e exciton levels changes the radiative decay time of the NCs at both helium and room temperatures. We demonstrate the role of both effects in CdSe NCs and compare our predictions with available experimental data.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1021/acs.nanolett.8b01980DOIArticle
https://pubs.acs.org/doi/suppl/10.1021/acs.nanolett.8b01980PublisherSupporting Information
ORCID:
AuthorORCID
Efros, Alexander L.0000-0003-1938-553X
Additional Information:© 2018 American Chemical Society. Received: May 15, 2018; Revised: June 15, 2018; Published: June 21, 2018. Al.L.E. acknowledges the financial support of the Office of Naval Research (ONR) through the Naval Research Laboratory Basic Research Program. The authors declare no competing financial interests.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Naval Research LaboratoryUNSPECIFIED
Subject Keywords:Exciton fine structure, nanocrystals, short- and long- range electron-hole exchange interaction, hole level structure
Record Number:CaltechAUTHORS:20180622-084422162
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20180622-084422162
Official Citation:Band-Edge Exciton in CdSe and Other II–VI and III–V Compound Semiconductor Nanocrystals − Revisited. Peter C. Sercel and Alexander L. Efros. Nano Letters 2018 18 (7), 4061-4068. DOI: 10.1021/acs.nanolett.8b01980
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:87311
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:23 Jun 2018 15:43
Last Modified:26 Jul 2018 21:33

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