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Valley-dependent Carrier and Lattice Dynamics in Silicon measured by Transient XUV Spectroscopy

Cushing, Scott K. and Carneiro, Lucas M. and Zürch, Michael and Kraus, Peter M. and Kaplan, Chris J. and Chang, Hung-Tzu and Leone, Stephen R. (2017) Valley-dependent Carrier and Lattice Dynamics in Silicon measured by Transient XUV Spectroscopy. In: 2017 Conference on Lasers and Electro-Optics (CLEO). IEEE , Piscataway, NJ, Art. No. ATh3C.5. ISBN 978-1-943580-27-9. http://resolver.caltech.edu/CaltechAUTHORS:20180627-160646605

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Abstract

Transient XUV core level spectroscopy is used to resolve photoexcited electron and hole distributions, as well as carrier-phonon and phonon-phonon scattering times, in the Γ, L, and X valleys of silicon.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1364/CLEO_AT.2017.ATh3C.5DOIArticle
ORCID:
AuthorORCID
Cushing, Scott K.0000-0003-3538-2259
Leone, Stephen R.0000-0003-1819-1338
Additional Information:© 2017 Optical Society of America.
Classification Code:OCIS codes: (300.6470) Spectroscopy, semiconductors; (320.7130) Ultrafast processes in condensed matter, including semiconductors; (320.7150) Ultrafast spectroscopy; (340.7480) X-rays, soft x-rays, extreme ultraviolet (EUV); (320.7120) Ultrafast phenomena
Record Number:CaltechAUTHORS:20180627-160646605
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20180627-160646605
Official Citation:S. K. Cushing, L. M. Carneiro, M. Zürch, P. M. Kraus, C. J. Kaplan, H. Chang, and S. R. Leone, "Valley-dependent Carrier and Lattice Dynamics in Silicon measured by Transient XUV Spectroscopy," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optical Society of America, 2017), paper ATh3C.5.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:87423
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:28 Jun 2018 14:01
Last Modified:28 Jun 2018 14:01

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