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Electron and Hole Dynamics in Silicon-Germanium Alloy Measured by Attosecond XUV Transient Absorption

Zürch, M. and Borja, L. J. and Chang, H.-T. and Kraus, P. M. and Cushing, S. and Kaplan, C. J. and Gandman, A. and Prell, J. S. and Pemmaraju, C. D. and Prendergast, D. and Neumark, D. and Leone, S. R. (2016) Electron and Hole Dynamics in Silicon-Germanium Alloy Measured by Attosecond XUV Transient Absorption. In: International Conference on Ultrafast Phenomena 2016. Optical Society of America , Washington, DC, Art. No. UM1A.5. ISBN 978-1-943580-18-7. https://resolver.caltech.edu/CaltechAUTHORS:20180627-161210002

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Abstract

Electron-hole dynamics is measured by attosecond transient absorption in silicon-germanium alloy. The germanium atoms act as reporter atoms by time-dependent probing the M_(4,5)-edge, revealing electron and hole dynamics, as well as a new midgap feature.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1364/UP.2016.UM1A.5DOIArticle
ORCID:
AuthorORCID
Cushing, S.0000-0003-3538-2259
Neumark, D.0000-0002-3762-9473
Leone, S. R.0000-0003-1819-1338
Additional Information:© 2016 The Optical Society.
Record Number:CaltechAUTHORS:20180627-161210002
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20180627-161210002
Official Citation:M. Zürch, L. J. Borja, H. -. Chang, P. M. Kraus, S. Cushing, C. J. Kaplan, A. Gandman, J. S. Prell, C. D. Pemmaraju, D. Prendergast, D. M. Neumark, and S. R. Leone, "Electron and Hole Dynamics in Silicon-Germanium Alloy Measured by Attosecond XUV Transient Absorption," in International Conference on Ultrafast Phenomena, OSA Technical Digest (online) (Optical Society of America, 2016), paper UM1A.5.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:87425
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:28 Jun 2018 14:23
Last Modified:03 Oct 2019 19:55

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