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Transient decay of satellite lines of bound excitons in Si: P

Hunter, A. T. and Lyon, S. A. and Smith, D. L. and McGill, T. C. (1979) Transient decay of satellite lines of bound excitons in Si: P. Physical Review B, 20 (6). pp. 2431-2437. ISSN 2469-9950. doi:10.1103/PhysRevB.20.2431.

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The transient decay of the α and β series of lines in the photoluminescence spectrum of Si: P are reported. The decays of the α lines are compared with the decays of the β lines. The results are consistent with β_2 having the same initial state as α3. The results for β_1 and β_3 are less certain. Their decays are consistent with β_1 having the same initial state as either α_2 or α_3, and with β3 having the same initial states as α_4. Overlap between lines, uncertainty in the decay of the boron bound exciton and the presence of unidentified background all make it difficult to make conclusive line assignments.

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Additional Information:© 1979 American Physical Society. Received 29 January 1979. The authors wish to acknowledge helpful conversations with Ken Elliott and Gordon Mitchard. The transmutation doping of the silicon sample was carried out by Professor R. Hart of Texas A&M University with the assistance of M. Young of Hughes Research Laboratories. This research was supported in part by ONR and ARPA.
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Office of Naval Research (ONR)UNSPECIFIED
Advanced Research Projects Agency (ARPA)UNSPECIFIED
Issue or Number:6
Record Number:CaltechAUTHORS:20180702-101720986
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:87513
Deposited By: Tony Diaz
Deposited On:03 Jul 2018 18:11
Last Modified:15 Nov 2021 20:49

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