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Selective excitation luminescence in bulk-grown GaAs

Hunter, A. T. and McGill, T. C. (1982) Selective excitation luminescence in bulk-grown GaAs. Applied Physics Letters, 40 (2). pp. 169-171. ISSN 0003-6951. doi:10.1063/1.93031.

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We have measured the excited state levels of two different shallow acceptors in bulk‐grown GaAs, using selective excitation luminescence. The 1S–2S energy differences were measured to be 21.5 and 18.5 meV, respectively. By comparing these values to those measured by two‐hole transition luminescence in high quality epitaxial GaAs [Ashen et al., J. Phys. Chem. Solids 36, 1041 (1975)], the acceptors were identified as Zn and C. The measured 1S–2P energy differences also support the identification. These studies demonstrate that selective excitation luminescence can be used to identify shallow acceptors in bulk‐grown semi‐insulating GaAs, and hence can be used as a diagnostic tool for bulk‐grown samples.

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Additional Information:© 1982 American Institute of Physics. Received 6 July 1981; accepted for publication 2 October 1981. We would like to acknowledge the support from the Office of Naval Research under Contract No. N00014-81-K-0305. The authors also gratefully acknowledge H. Kimura, O. J. Marsh, and H. V. Winston of Hughes Research Laboratories for providing the samples and the results of Hall-effect measurements on the samples.
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Office of Naval Research (ONR)N00014-81-K-0305
Issue or Number:2
Classification Code:PACS numbers: 78.55.Ds, 71.55.Fr, 78.60. - b
Record Number:CaltechAUTHORS:20180702-104349415
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Official Citation:Selective excitation luminescence in bulk‐grown GaAs. A. T. Hunter and T. C. McGill. Applied Physics Letters 1982 40:2, 169-171
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:87515
Deposited By: Tony Diaz
Deposited On:03 Jul 2018 18:09
Last Modified:15 Nov 2021 20:49

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