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Nanophotonic design for 2D and quantum materials

Atwater, Harry A. (2017) Nanophotonic design for 2D and quantum materials. In: Photonic and Phononic Properties of Engineered Nanostructures VII. Proceedings of SPIE. No.10112. Society of Photo-optical Instrumentation Engineers (SPIE) , Bellingham, WA, Art. No. 1011203. ISBN 9781510606654. http://resolver.caltech.edu/CaltechAUTHORS:20180705-164743705

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Abstract

Design of the resonant optical response of ultrathin two-dimensional materials and heterostructures is enabling scientific exploration of new materials phenomena. As an example, demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum andtungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency. We also report mid-infrared spectroscopy measurements of an electrostatically gated topological insulator, in which we observe several percent modulation of transmittance and reflectance of (Bi_(1-x)Sb_x)_2Te_3 films as gating shifts the Fermi level. Infrared transmittance measurements of gated (B_(i1-x)Sb_x)_2Te_3 films were enabled by use of an epitaxial lift-off method for large-area transfer of TI films from the infrared-absorbing SrTiO_3 growth substrates to thermal oxidized silicon substrates. We combine these optical experiments with transport measurements and angle-resolved photoemission spectroscopy to identify the observed spectral modulation as a gate-driven transfer of spectral weight between both bulk and topological surface channels and interband and intraband channels. We develop a model for the complex permittivity of gated (Bi_(1-x)Sb_x)_2Te_3, and find a good match to our experimental data. These results open the path for layered topological insulator materials as a new candidate for tunable infrared optics and highlight the possibility of switching topological optoelectronic phenomena between bulk and spin-polarized surface regimes.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1117/12.2260429DOIArticle
ORCID:
AuthorORCID
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE).
Record Number:CaltechAUTHORS:20180705-164743705
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20180705-164743705
Official Citation:Harry A. Atwater, "Nanophotonic design for 2D and quantum materials (Conference Presentation)", Proc. SPIE 10112, Photonic and Phononic Properties of Engineered Nanostructures VII, 1011203 (28 April 2017); doi: 10.1117/12.2260429; https://doi.org/10.1117/12.2260429
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:87579
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:06 Jul 2018 16:23
Last Modified:06 Jul 2018 16:23

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