Zahler, James M. and Tanabe, Katsuaki and Ladous, Corinne and Pinnington, Tom and Newman, Frederick D. and Atwater, Harry A. (2007) Photocurrent enhancement in In_(0.53)Ga_(0.47)As solar cells grown on InP/SiO_2/Si transferred epitaxial templates. In: High and Low Concentration for Solar Electric Applications II. Proceedings of SPIE. No.6649. Society of Photo-optical Instrumentation Engineers (SPIE) , Bellingham, WA, Art. No. 664909. ISBN 9780819467973. https://resolver.caltech.edu/CaltechAUTHORS:20180706-141431444
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Abstract
InP/Si engineered substrates formed by wafer bonding and layer transfer have the potential to significantly reduce the cost and weight of III-V compound semiconductor solar cells. InP/Si substrates were prepared by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. Following thinning of the transferred InP film to remove surface damage caused by the implantation and exfoliation process, InGaAs solar cells lattice-matched to bulk InP were grown on these substrates using metal-organic chemical vapor deposition. The photovoltaic current-voltage characteristics of the InGaAs cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, and had a ~20% higher short-circuit current which we attribute to the high reflectivity of the InP/SiO_2/Si bonding interface. This work provides an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications.
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| Alternate Title: | Photocurrent enhancement in In0.53Ga0.47As solar cells grown on InP/SiO2/Si transferred epitaxial templates | ||||||
| Additional Information: | © 2007 Society of Photo-Optical Instrumentation Engineers (SPIE). The authors would like to thank Anna Fontcuberta i Morral of the Walter Schottky Institute for her work in the development of the InP/Si substrate fabrication process. The work at Aonex Technologies was supported by a Small Business Innovation Research (SBIR) awarded and administered by the Air Force Research Laboratory (AFRL). The Caltech portion of this work was supported by the National Renewable Energy Laboratory (NREL) subcontract no. XAT-4-33624-10. | ||||||
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| Subject Keywords: | solar cells, wafer bonding, layer transfer, III-V, InGaAs, InP, Si, SiO2, low cost, epitaxial growth | ||||||
| Series Name: | Proceedings of SPIE | ||||||
| Issue or Number: | 6649 | ||||||
| DOI: | 10.1117/12.734801 | ||||||
| Record Number: | CaltechAUTHORS:20180706-141431444 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20180706-141431444 | ||||||
| Official Citation: | James M. Zahler, Katsuaki Tanabe, Corinne Ladous, Tom Pinnington, Frederick D. Newman, Harry A. Atwater, "Photocurrent enhancement in In0.53Ga0.47As solar cells grown on InP/SiO2/Si transferred epitaxial templates", Proc. SPIE 6649, High and Low Concentration for Solar Electric Applications II, 664909 (11 September 2007); doi: 10.1117/12.734801; https://doi.org/10.1117/12.734801 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 87611 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | George Porter | ||||||
| Deposited On: | 09 Jul 2018 15:17 | ||||||
| Last Modified: | 15 Nov 2021 20:49 |
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