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Surface-emitting microlasers for photonic switching and interchip connections

Jewell, J. L. and Lee, Y. H. and Scherer, A. and McCall, S. L. and Olsson, N. A. and Harbison, J. P. and Florez, L. T. (1990) Surface-emitting microlasers for photonic switching and interchip connections. Optical Engineering, 29 (3). pp. 210-214. ISSN 0091-3286. doi:10.1117/12.55593.

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Vertical-cavity electrically pumped surface-emitting microlasers are formed on GaAs substrates at densities greater than two million per square centimeter. Two wafers were grown with ln_(0.2)Ga_(0.8)As active material composing three 80 Å thick quantum wells in one and a single quantum well (SQW) 100 Å thick in the other. Lasing was seen in devices as small as 1 .5 µm diameter with <0.05 µm^3 active material. SQW microlasers 5 x 5 µm square had room-temperature cw current thresholds as low as 1.5 mA with 983 nm output wavelength. 10 x 10 µm square SQW microlasers were modulated by a pseudorandom bit generator at 1 Gb/s with less than 10^(-10) bit error rate. Pulsed output >170 mW was obtained from a 100 µm square device. The laser output passes through the nominally transparent substrate and out its back side, a configuration well suited for micro-optic integration and photonic switching and interchip connections.

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Additional Information:© 1990 Society of Photo-Optical Instrumentation Engineers. Invited Paper PI-105 received Sept. 1, 1989; revised manuscript received Dec. 1, 1989; accepted for publication Dec. 1, 1989.
Issue or Number:3
Record Number:CaltechAUTHORS:20180706-163812165
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Official Citation:Jack L. Jewell, Yong H. Lee, Axel Scherer, Samuel L. McCall, N. Anders Olsson, James P. Harbison, Leigh T. Florez, "Surface-emitting microlasers for photonic switching and interchip connections," Optical Engineering 29(3), (1 March 1990).
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:87628
Deposited By: George Porter
Deposited On:09 Jul 2018 16:18
Last Modified:15 Nov 2021 20:50

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