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Microfabrication below 10 nm

Van der Gaag, B. P. and Scherer, A. and Schiavone, L. M. (1990) Microfabrication below 10 nm. In: Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors. Proceedings of SPIE. No.1284. Society of Photo-optical Instrumentation Engineers (SPIE) , Bellingham, WA, pp. 161-169. ISBN 9780819403353.

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We describe a new electron beam lithography method for producing structures with lateral sizes smaller than the incident beam diameter. These patterns are transferred into GaAs/AlGaAs, InGaAs/GaAs and InGaAs/InP quantum well heterostructures using chemically assisted ion beam etching, thereby forming uniform arrays of pillars with lateral dimensions at or below 10 nm. To correlate the sizes of such structures with our exposure and development conditions, reflection electron microscopy observations are used.

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Alternate Title:Microfabrication below 10 nanometers
Additional Information:© 1990 Society of Photo-Optical Instrumentation Engineers (SPIE). The authors wish to thank J.P. Harbison and R.J. Bhat for growing the GaAs/AlGaAs and InGaAs/InP structures. This work was partially supported by by the U.S. Army under contract DAAL01-89-C-0900.
Funding AgencyGrant Number
Army Research Office (ARO)DAAL01-89-C-0900
Series Name:Proceedings of SPIE
Issue or Number:1284
Record Number:CaltechAUTHORS:20180706-165009074
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Official Citation:B. P. Van der Gaag, Axel Scherer, Lawrence M. Schiavone, "Microfabrication below 10 nm", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20785;
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:87630
Deposited By: George Porter
Deposited On:09 Jul 2018 15:59
Last Modified:15 Nov 2021 20:50

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