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Ion etching of ultranarrow structures

Scherer, A. and Van der Gaag, B. P. (1990) Ion etching of ultranarrow structures. In: Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors. Proceedings of SPIE. No.1284. Society of Photo-optical Instrumentation Engineers (SPIE) , Bellingham, WA, pp. 149-160. ISBN 0819403350.

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We describe the use of Polymethylmethacrylate as both electron beam sensitive resist and ion etch mask for high-resolution pattern transfer. By using high-resolution electron beam lithography, chemically assisted ion beam etching, and in-situ metallization, we have fabricated ultra-narrow gates with lateral dimensions below 20 nm, spaced with < 50 nm pitch on high mobility 2D electron gas material. This technique, which is thought to provide extremely small lateral electron depletion lengths and well defined confienement potentials, allows us to produce new and more complicated structures for the study of quantum transport.

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Additional Information:© 1990 Society of Photo-Optical Instrumentation Engineers (SPIE). The authors gratefully acknowledge the contributions of E.D. Beebe. M.L. Roukes, L.M. Schiavone and P.S.D. Lin to this study.
Series Name:Proceedings of SPIE
Issue or Number:1284
Record Number:CaltechAUTHORS:20180709-091321458
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Official Citation:Axel Scherer, B. P. Van der Gaag, "Ion etching of ultranarrow structures", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20784;
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:87632
Deposited By: George Porter
Deposited On:09 Jul 2018 16:33
Last Modified:15 Nov 2021 20:50

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