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Edge-emitting quantum well laser with integrated intracavity electrostatic gate

Lee, R. K. and Xu, Y. J. and O'Brien, J. and Painter, O. J. and Scherer, A. and Yariv, A. (1997) Edge-emitting quantum well laser with integrated intracavity electrostatic gate. In: Optoelectronic Integrated Circuits II. Proceedings of SPIE. No.3290. Society of Photo-optical Instrumentation Engineers (SPIE) , Bellingham, WA, pp. 172-180. ISBN 9780819427298.

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Ridge waveguide, edge-emitting single quantum well GaAs lasers with an integrated gating electrode have been fabricated. These devices integrate a MESFET structure with the laser PN junction so that the SBD (Schottky barrier diode) depletion layer can be used for transverse current confinement in the laser. Device fabrication was very simple requiring only an anisotropic etch for waveguide definition followed by a single self-aligned contact deposition step. The Schottky barrier depletion layers on either side of the ridge waveguide act to confine free carriers. This structure allows for separation of the optical and electrical confinement in the transverse direction without requiring complex fabrication. The device demonstrated modulation of the pulsed lasing threshold with gate control voltage on a 30 micron wide ridge. Above threshold, increasing power output with increasing gate voltage was demonstrated with negligible gate current. The multimode lasing spectrum showed that the increased power output occurred for all modes with no shift in the mode wavelengths to within the resolution of the measurement system.

Item Type:Book Section
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Painter, O. J.0000-0002-1581-9209
Additional Information:© 1997 Society of Photo-optical Instrumentation Engineers (SPIE). The authors gratefully acknowledge the funding support for this project from the Advanced Research Projects Agency and the Office of Naval Research. R.K. Lee and O.J. Painter also receive support from the Natural Science and Engineering Research Council of Canada.
Funding AgencyGrant Number
Advanced Research Projects Agency (ARPA)UNSPECIFIED
Office of Naval Research (ONR)UNSPECIFIED
Natural Sciences and Engineering Research Council of Canada (NSERC)UNSPECIFIED
Subject Keywords:semiconductor laser, Schottky barrier diode, electrostatic current confinement, MESFET
Series Name:Proceedings of SPIE
Issue or Number:3290
Record Number:CaltechAUTHORS:20180709-160411681
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Official Citation:Reginald K. Lee, Yuan Jian Xu, John D. O'Brien, Oskar J. Painter, Axel Scherer, Amnon Yariv, "Edge-emitting quantum well laser with integrated intracavity electrostatic gate", Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); doi: 10.1117/12.298238;
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:87670
Deposited By: Tony Diaz
Deposited On:09 Jul 2018 23:15
Last Modified:15 Nov 2021 20:50

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