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Reactions of Etched, Single Crystal (111)B-Oriented InP To Produce Functionalized Surfaces with Low Electrical Defect Densities

Sturzenegger, Marcel and Prokopuk, Nicholas and Kenyon, C. N. and Royea, William J. and Lewis, Nathan S. (1999) Reactions of Etched, Single Crystal (111)B-Oriented InP To Produce Functionalized Surfaces with Low Electrical Defect Densities. Journal of Physical Chemistry B, 103 (49). pp. 10838-10849. ISSN 1520-6106. doi:10.1021/jp992290f. https://resolver.caltech.edu/CaltechAUTHORS:20180720-142204547

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Abstract

Synthetic routes have been developed that allow attachment of a variety of functional groups to etched, single-crystal InP surfaces. Benzyl halides, alkyl halides, silyl halides, and esters reacted readily with InP to yield covalently attached overlayers on the semiconductor surface. High-resolution X-ray photoelectron spectroscopy (XPS) revealed that the functionalization chemistry was consistent with the reactivity of surficial hydroxyl groups. Analysis of the XP spectra of the (111)B-oriented (P-rich) face in ultrahigh vacuum revealed signals ascribable to a monolayer of oxidized P atoms on the etched (111)B InP surface. The lack of reactivity of the (111)A-oriented (In-rich) face with these same functionalization reagents is therefore attributed to the difference in the nucleophilicity and acidity of the In and P oxides that are present on the (111)A and (111)B faces, respectively. The coverage of benzylic groups obtained through functionalization of (111)B-oriented InP with benzyl halides was estimated to be 4 × 10^(14) cm^2. This coverage implies that the functionalization can only proceed at alternate surface P atom sites in this system, which is expected from molecular packing considerations of these particular functional groups. Photoluminescence decay measurements were performed to investigate the electrical properties of the etched and modified InP surfaces, and these data indicated that the surface recombination velocity of the functionalized InP surface was ≈10^2 cm s^(-1). This low surface recombination velocity implies that <1 electrically active defect is present for every 10^5 atoms on the modified InP surface, indicating that high electrical quality can be maintained while introducing a variety of chemical functionalities onto the (111)B surface of InP.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://dx.doi.org/10.1021/jp992290fDOIArticle
ORCID:
AuthorORCID
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 1999 American Chemical Society. Received: July 8, 1999. We acknowledge the Department of Energy, Office of Basic Energy Sciences, for support of this work. M.S. acknowledges the Swiss National Science Foundation for a postdoctoral fellowship, and we thank A. Rice for technical assistance with the XPS measurements.
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)UNSPECIFIED
Swiss National Science Foundation (SNSF)UNSPECIFIED
Issue or Number:49
DOI:10.1021/jp992290f
Record Number:CaltechAUTHORS:20180720-142204547
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20180720-142204547
Official Citation:Reactions of Etched, Single Crystal (111)B-Oriented InP To Produce Functionalized Surfaces with Low Electrical Defect Densities Marcel Sturzenegger, Nicholas Prokopuk, C. N. Kenyon, William J. Royea, and Nathan S. Lewis The Journal of Physical Chemistry B 1999 103 (49), 10838-10849 DOI: 10.1021/jp992290f
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:88081
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:23 Jul 2018 20:15
Last Modified:16 Nov 2021 00:23

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