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Selective low-temperature mass transport in InGaAsP/InP lasers

Hasson, A. and Chiu, L. C. and Chen, T. R. and Koren, U. and Rav-Noy, Z. and Yu, K. L. and Margalit, S. and Yariv, A. (1983) Selective low-temperature mass transport in InGaAsP/InP lasers. Applied Physics Letters, 43 (5). pp. 403-405. ISSN 0003-6951. doi:10.1063/1.94395.

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A low-temperature mass transport process in InP was investigated. Mass transport of InP was achieved at 570–600 °C in a closed ampoule using iodine or InI as a catalytic transporting agent. Accomplishing the mass transport process at lower temperature has eliminated the problem of thermal etching and resulted in lasers with higher T0.

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Additional Information:© 1983 American Institute of Physics. Received 10 February 1983; accepted 7 June 1983. This work is supported by the National Science Foundation and the Office of Naval Research.
Subject Keywords:indium phosphides; fabrication; liquid phase epitaxy; heterojunctions; temperature effects; atom transport; mass transfer; high temperature; etching; semiconductor lasers; scanning electron microscopy; gallium arsenides; indium arsenides; gallium phosphides; indium iodides
Issue or Number:5
Record Number:CaltechAUTHORS:HASapl83
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8824
Deposited By: Tony Diaz
Deposited On:20 Sep 2007
Last Modified:08 Nov 2021 20:53

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