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The Si—C Bond Distance in Si(CH_3)_4

Sheehan, W. F., Jr. and Schomaker, Verner (1952) The Si—C Bond Distance in Si(CH_3)_4. Journal of the American Chemical Society, 74 (15). p. 3956. ISSN 0002-7863. https://resolver.caltech.edu/CaltechAUTHORS:20180725-111210313

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Abstract

A reinvestigation of tetramethylsilane by electron diffraction has led to the result Si-C = 1.888 ± 0.02 Å. (previous report: 1.93 ± 0.03 Å.), in agreement with the values found for carborundum (1.88-1.90 Å.), the three other methylsilanes (1.87 Å.), and Si_2(CH_3)O_5 (1.90 ± 0.02 Å.).


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1021/ja01135a522DOIArticle
Alternate Title:The Si—C Bond Distance in Si(CH3)4
Additional Information:© 1952 American Chemical Society. Received March 31, 1952.
Other Numbering System:
Other Numbering System NameOther Numbering System ID
Gates and Crellin Laboratories of Chemistry1671
Issue or Number:15
Record Number:CaltechAUTHORS:20180725-111210313
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20180725-111210313
Official Citation:The Si—C Bond Distance in Si(CH3)4 W. F. Sheehan Jr. and Verner Schomaker Journal of the American Chemical Society 1952 74 (15), 3956-3956 DOI: 10.1021/ja01135a522
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:88254
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:25 Jul 2018 20:48
Last Modified:03 Oct 2019 20:04

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