Sheehan, W. F., Jr. and Schomaker, Verner (1952) The Si—C Bond Distance in Si(CH_3)_4. Journal of the American Chemical Society, 74 (15). p. 3956. ISSN 0002-7863. doi:10.1021/ja01135a522. https://resolver.caltech.edu/CaltechAUTHORS:20180725-111210313
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Abstract
A reinvestigation of tetramethylsilane by electron diffraction has led to the result Si-C = 1.888 ± 0.02 Å. (previous report: 1.93 ± 0.03 Å.), in agreement with the values found for carborundum (1.88-1.90 Å.), the three other methylsilanes (1.87 Å.), and Si_2(CH_3)O_5 (1.90 ± 0.02 Å.).
| Item Type: | Article | ||||||
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| Alternate Title: | The Si—C Bond Distance in Si(CH3)4 | ||||||
| Additional Information: | © 1952 American Chemical Society. Received March 31, 1952. | ||||||
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| Issue or Number: | 15 | ||||||
| DOI: | 10.1021/ja01135a522 | ||||||
| Record Number: | CaltechAUTHORS:20180725-111210313 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20180725-111210313 | ||||||
| Official Citation: | The Si—C Bond Distance in Si(CH3)4 W. F. Sheehan Jr. and Verner Schomaker Journal of the American Chemical Society 1952 74 (15), 3956-3956 DOI: 10.1021/ja01135a522 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 88254 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | George Porter | ||||||
| Deposited On: | 25 Jul 2018 20:48 | ||||||
| Last Modified: | 16 Nov 2021 00:25 |
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