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Formation of Injecting and Blocking Contacts on High-Resistivity Germanium

Ottaviani, G. and Marrello, V. and Mayer, J. W. and Nicolet, M-A. and Caywood, J. M. (1972) Formation of Injecting and Blocking Contacts on High-Resistivity Germanium. Applied Physics Letters, 20 (8). pp. 323-325. ISSN 0003-6951. doi:10.1063/1.1654169.

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The behavior of Al and Sb/Ge/Sb layers evaporated on high-purity Ge and heat treated at 280 °C is studied by reverse-recovery, double-injection, and nuclear-particle-response techniques. The results indicate that the contacts have the injection and blocking characteristics of p- and n-type material, respectively. Backscattering measurements with 1.8-MeV 4He+ ions show that solid-solid reactions occur.

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Additional Information:©1972 The American Institute of Physics. (Received 27 December 1971) The authors are indebted to J.O. McCaldin, E. Rimini, and R. Baron for interesting and fruitful discussions. We also thank W.L. Hansen and R.N. Hall for providing the material and G.T. Culbertson (U.S.C.) for assistance in sample preparation. One of us (G.O.) thanks Professor A. Alberigi Quaranta for his support. Our warmest gratitude goes to Betty Mayer who prodigiously seconded our efforts with hospitality, cheerfulness, and unfailing patience. Supported in part by Advanced Research Projects Agency (D. Russell) through AEC, Division of Biology and Medicine.
Issue or Number:8
Record Number:CaltechAUTHORS:OTTapl72
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8830
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Deposited On:20 Sep 2007
Last Modified:08 Nov 2021 20:53

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