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Crystallization of Ge and Si in metal films. II

Sigurd, D. and Ottaviani, G. and Arnal, H. J. and Mayer, J. W. (1974) Crystallization of Ge and Si in metal films. II. Journal of Applied Physics, 45 (4). pp. 1740-1745. ISSN 0021-8979. doi:10.1063/1.1663484.

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Heat treatment of evaporated Si in contact with Ag films and Ge in contact with Al films results in the formation of precipitates of the semiconductor in a metal matrix. The structure of these precipitates was studied by transmission electron microscopy and diffraction (TEMD) and MeV 4He ion channeling techniques. TEMD studies showed that the semiconductor precipitates were crystalline in nature. Channeling techniques showed that the crystallites did not have a simple orientation relationship with the underlying single-crystal substrate.

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Additional Information:©1974 American Institute of Physics. (Received 4 June 1973; revised 12 November 1973) The authors wish to thank Professor J.O. McCaldin and Professor R.E. Villagrana for many long and helpful discussions. Work supported in part by Advanced Research Projects Agency through USAEC, Division of Biology and Medicine.
Issue or Number:4
Record Number:CaltechAUTHORS:SIGjap74
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8842
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Deposited On:20 Sep 2007
Last Modified:08 Nov 2021 20:53

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