Leong, Y. C. and Weinreb, S. (2000) Empirical load-line capacitance models for HEMT. In: 2000 IEEE MTT-S International Microwave Symposium Digest. Vol.3. IEEE , Piscataway, NJ, pp. 1385-1388. ISBN 078035687X. https://resolver.caltech.edu/CaltechAUTHORS:20180802-142536217
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Abstract
Models for describing the gate-source and gate-drain capacitances' variation along a resistive load line have been proposed. They are charge conservative and consistent with the small-signal model at bias points along the load line. The extraction procedure for the models' parameters is fast and intuitive. The models can be implemented easily in most circuit simulator programs.
| Item Type: | Book Section | ||||||
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| Additional Information: | © 2000 IEEE. | ||||||
| Record Number: | CaltechAUTHORS:20180802-142536217 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20180802-142536217 | ||||||
| Official Citation: | Y. C. Leong and S. Weinreb, "Empirical load-line capacitance models for HEMT," 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), Boston, MA, USA, 2000, pp. 1385-1388 vol.3. doi: 10.1109/MWSYM.2000.862232 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 88526 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | George Porter | ||||||
| Deposited On: | 02 Aug 2018 22:17 | ||||||
| Last Modified: | 03 Oct 2019 20:07 |
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