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Empirical load-line capacitance models for HEMT

Leong, Y. C. and Weinreb, S. (2000) Empirical load-line capacitance models for HEMT. In: 2000 IEEE MTT-S International Microwave Symposium Digest. Vol.3. IEEE , Piscataway, NJ, pp. 1385-1388. ISBN 078035687X. http://resolver.caltech.edu/CaltechAUTHORS:20180802-142536217

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Abstract

Models for describing the gate-source and gate-drain capacitances' variation along a resistive load line have been proposed. They are charge conservative and consistent with the small-signal model at bias points along the load line. The extraction procedure for the models' parameters is fast and intuitive. The models can be implemented easily in most circuit simulator programs.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/mwsym.2000.862232DOIArticle
Additional Information:© 2000 IEEE.
Record Number:CaltechAUTHORS:20180802-142536217
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20180802-142536217
Official Citation:Y. C. Leong and S. Weinreb, "Empirical load-line capacitance models for HEMT," 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), Boston, MA, USA, 2000, pp. 1385-1388 vol.3. doi: 10.1109/MWSYM.2000.862232
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:88526
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:02 Aug 2018 22:17
Last Modified:02 Aug 2018 22:17

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