Pobanz, C. and Matloubian, M. and Radisic, V. and Raghavan, G. and Case, M. and Micovic, M. and Hu, M. and Nguyen, C. and Weinreb, S. and Samoska, L. (2000) High performance MMICs with submillimeter wave InP-based HEMTs. In: Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials. IEEE , Piscataway, NJ, pp. 67-70. ISBN 0780363205. https://resolver.caltech.edu/CaltechAUTHORS:20180802-142536304
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Abstract
This paper presents some recently developed MMICs based on a 0.1-/spl mu/m gate-length InAlAs/InGaAs/InP HEMT process with an f/sub max/ above 600 GHz. InP-based HEMTs provide more power gain and lower noise at higher frequencies than any other transistor, including GaAs-based pHEMTs. A number of state-of-the-art InP HEMT MMICs will be presented. This includes a 150-205 GHz amplifier with 15 dB of gain, a broadband 60-140 GHz amplifier with 25 mW output power at 140 GHz, a high gain Ka-band LNA and static frequency-divider circuits operating at clock rates above 45 GHz. The high frequency performance of a next-generation 0.08-/spl mu/m-gate InAlAsSb/InAlAs/InGaAs/InP HEMT technology will also be presented.
| Item Type: | Book Section | ||||||
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| Additional Information: | © 2000 IEEE. | ||||||
| Record Number: | CaltechAUTHORS:20180802-142536304 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20180802-142536304 | ||||||
| Official Citation: | C. Pobanz et al., "High performance MMICs with submillimeter wave InP-based HEMTs," Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107), Williamsburg, VA, USA, 2000, pp. 67-70. doi: 10.1109/ICIPRM.2000.850232 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 88527 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | George Porter | ||||||
| Deposited On: | 02 Aug 2018 22:16 | ||||||
| Last Modified: | 03 Oct 2019 20:07 |
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