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Rate Constants for Electron Transfer Across Semiconductor/Liquid Interfaces: Theory and Experiment

Lewis, N. S. (1999) Rate Constants for Electron Transfer Across Semiconductor/Liquid Interfaces: Theory and Experiment. Zeitschrift für Physikalische Chemie, 1 (1). pp. 149-160. ISSN 0942-9352. doi:10.1524/zpch.1998.1.1.149.

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Fermi’s Golden Rule has previously been used to formulate rate expressions for transfer of delocalized charge carriers in a nondegenerately doped semiconducting electrode to localized, outer-sphere redox acceptors in an electrolyte phase. If the charge-transfer rate constant is known experimentally, these rate expressions allow computation of the value of the electronic coupling matrix element between the semiconducting electrode and the redox species. This treatment also facilitates comparison between charge-transfer kinetic data at metallic and semiconducting electrodes in terms of parameters such as the electronic coupling to the electrode, the attenuation of coupling with distance into the electrolyte, and the reorganization energy of the charge-transfer event. Within this framework, rate constant values expected at representative semiconducting electrodes have been evaluated from experimental data for charge transfer from Au electrodes to various redox acceptors.

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Lewis, N. S.0000-0001-5245-0538
Additional Information:© 1999 Oldenbourg Wissenschaftsverlag, München. Received August 26, 1998; accepted December 10, 1998.
Subject Keywords:electron transfer; electrode kinetics; n-Si/methanol contacts; n-GaAs/CH3CN contacts
Issue or Number:1
Record Number:CaltechAUTHORS:20180803-083706152
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:88558
Deposited By: Tony Diaz
Deposited On:03 Aug 2018 17:06
Last Modified:16 Nov 2021 00:27

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