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Analysis of Ga_(1-x)Al_xAs-GaAs Heteroepitaxial Layers by Proton Backscattering

Gamo, K. and Inada, T. and Samid, I. and Lee, C. P. and Mayer, J. W. (1976) Analysis of Ga_(1-x)Al_xAs-GaAs Heteroepitaxial Layers by Proton Backscattering. In: Ion Beam Surface Layer Analysis. Vol.1. Springer , Boston, MA, pp. 375-384. ISBN 978-1-4615-8878-8.

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Proton backscattering at < 1 MeV has been used to measure Ga_(1-x)A1_xAs heteroepitaxial layers on GaAs that are used in optoelectronic applications. By evaporating Ge on A1, we have obtained relative values of the stopping cross-section of A1 to Ge. Deposition of Ge layers on Ga_(1-x)A1_xAs layers removed problems associated with secondary electron suppression. The experimental data on composition compare well with analysis by other techniques.

Item Type:Book Section
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Additional Information:© 1976 Springer Science+Business Media New York. Work supported in part by National Science Foundation.
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Subject Keywords:GaAs Substrate; Kinematic Factor; HETEROEPITAXIAL Layer; Detector Solid Angle; Electron Microprobe Measurement
Record Number:CaltechAUTHORS:20180830-102916110
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:89308
Deposited By: Tony Diaz
Deposited On:30 Aug 2018 17:36
Last Modified:16 Nov 2021 00:34

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