Gamo, K. and Inada, T. and Samid, I. and Lee, C. P. and Mayer, J. W. (1976) Analysis of Ga_(1-x)Al_xAs-GaAs Heteroepitaxial Layers by Proton Backscattering. In: Ion Beam Surface Layer Analysis. Vol.1. Springer , Boston, MA, pp. 375-384. ISBN 978-1-4615-8878-8. https://resolver.caltech.edu/CaltechAUTHORS:20180830-102916110
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Abstract
Proton backscattering at < 1 MeV has been used to measure Ga_(1-x)A1_xAs heteroepitaxial layers on GaAs that are used in optoelectronic applications. By evaporating Ge on A1, we have obtained relative values of the stopping cross-section of A1 to Ge. Deposition of Ge layers on Ga_(1-x)A1_xAs layers removed problems associated with secondary electron suppression. The experimental data on composition compare well with analysis by other techniques.
| Item Type: | Book Section | ||||||
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| Additional Information: | © 1976 Springer Science+Business Media New York. Work supported in part by National Science Foundation. | ||||||
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| Subject Keywords: | GaAs Substrate; Kinematic Factor; HETEROEPITAXIAL Layer; Detector Solid Angle; Electron Microprobe Measurement | ||||||
| DOI: | 10.1007/978-1-4615-8876-4_32 | ||||||
| Record Number: | CaltechAUTHORS:20180830-102916110 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20180830-102916110 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 89308 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Tony Diaz | ||||||
| Deposited On: | 30 Aug 2018 17:36 | ||||||
| Last Modified: | 16 Nov 2021 00:34 |
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