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Precision, Damage-Free Etching by Electron-Enhanced Reactions: Results and Simulations

Gillis, H. P. and Anz, Samir J. and Han, Si-Ping and Su, Julius and Goddard, William A., III (2013) Precision, Damage-Free Etching by Electron-Enhanced Reactions: Results and Simulations. ECS Transactions, 50 (46). pp. 33-43. ISSN 1938-6737. https://resolver.caltech.edu/CaltechAUTHORS:20180914-100810600

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Abstract

Ion-enhanced dry etch methods inflict "etch process damage" through surface ion bombardment. These inherent limitations in conventional dry etch methods create potential roadblocks to achieving device properties necessary for scaling below 32 nm. We describe an alternative dry etch method in which electrons with energies below about 100 eV stimulate precision etching of features as small as 20 nm without damage. This Low Energy Electron Enhanced Etching (LE4) method also gives atomically smooth etched surfaces, very high selectivity between materials, and maintains stoichiometry of compound materials. LE4 etches low K dielectric materials with no loss of carbon, and gives Line Width Roughness (LWR) values dramatically smaller than achieved by ion-enhanced etching. We have developed the Electron Force Field (eFF) method to describe electron dynamics in highly excited electronic states, and use it to show preferential bond breaking and product desorption after electronic excitation of the sample surface.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1149/05046.0033ecstDOIArticle
ORCID:
AuthorORCID
Han, Si-Ping0000-0002-2213-4953
Goddard, William A., III0000-0003-0097-5716
Additional Information:© 2013 ECS - The Electrochemical Society. The authors are indebted to Mr. Stewart F. Sando of Systine for helpful discussions.
Issue or Number:46
Record Number:CaltechAUTHORS:20180914-100810600
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20180914-100810600
Official Citation:H.P. Gillis, Samir J. Anz, Si-Ping Han, Julius Su, and William A. Goddard III Precision, Damage-Free Etching by Electron-Enhanced Reactions: Results and Simulations ECS Trans. 2013 50(46): 33-43; doi:10.1149/05046.0033ecst
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:89632
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:14 Sep 2018 21:11
Last Modified:24 Nov 2020 00:38

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