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Single crystalline BaTiO_3 thin films synthesized using ion implantation induced layer transfer

Park, Young-Bae and Diest, Kenneth and Atwater, Harry A. (2007) Single crystalline BaTiO_3 thin films synthesized using ion implantation induced layer transfer. Journal of Applied Physics, 102 (7). Art. No. 074112. ISSN 0021-8979. doi:10.1063/1.2786915.

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Layer transfer of BaTiO3 thin films onto silicon-based substrates has been investigated. Hydrogen and helium ions were co-implanted to facilitate ion-implantation-induced layer transfer of films from BaTiO3 single crystals. From thermodynamic equilibrium calculations, we suggest that the dominant species during cavity nucleation and growth are H2, H+, H2O, Ba2+ and Ba–OH, and that the addition of hydrogen to the Ba–Ti–O system can effectively suppress volatile oxide formation during layer transfer and subsequent annealing. After ion implantation, BaTiO3 layers contain microstructural defects and hydrogen precipitates in the lattice, but after layer transfer, the single crystal is found to be stoichiometric. Using direct wafer bonding and layer splitting, single crystal BaTiO3 thin films were transferred onto amorphous Si3N4 and Pt substrates. Micro-Raman spectroscopy indicated that the density of defects generated by ion implantation in BaTiO3 can be significantly reduced during post-transfer annealing, returning the transferred layer to its single crystal state. Characterization using piezoresponse force microscopy shows that the layer transferred thin films are ferroelectric, with domain structures and piezoresponse characteristics similar to that of bulk crystals.

Item Type:Article
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Atwater, Harry A.0000-0001-9435-0201
Alternate Title:Single crystalline BaTiO3 thin films synthesized using ion implantation induced layer transfer
Additional Information:© 2007 American Institute of Physics. (Received 8 May 2007; accepted 14 August 2007; published online 11 October 2007) This work has been supported by the Army Research Office (ARO-MURI) under Grant No. DAAD 19-01-1-0517 and the Center for Science and Engineering of Materials at Caltech, an NSF MRSEC Center. One of the authors (Y.-B.P.) wishes to acknowledge the support of the Postdoctoral Fellowship Program from Korea Science and Engineering Foundation (KOSEF) and Dr. I.D. Kim at MIT for PLD-BaTiO_3 sample preparation.
Funding AgencyGrant Number
Army Research Office (ARO)DAAD 19-01-1-0517
Korea Science and Engineering FoundationUNSPECIFIED
Subject Keywords:annealing; barium compounds; crystal defects; ferroelectric thin films; ion beam assisted deposition; ion implantation; nucleation; Raman spectra; stoichiometry
Issue or Number:7
Record Number:CaltechAUTHORS:PARjap07
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:8998
Deposited By: Archive Administrator
Deposited On:13 Oct 2007
Last Modified:08 Nov 2021 20:55

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