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III-V Semiconductor Unipolar Barrier Infrared Detectors

Ting, David Z. (2018) III-V Semiconductor Unipolar Barrier Infrared Detectors. In: 2018 IEEE Photonics Conference (IPC). IEEE , Piscataway, NJ, pp. 1-2. ISBN 978-1-5386-5358-6.

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The II-VI semiconductor HgCdTe (MCT) is the most successful infrared photodetector material to date. MCT grown on nearly lattice-matched CdZnTe (CZT) substrate offers continuous cutoff wavelength (λ_(cutoff)) coverage from the short-wave infrared (SWIR) to the very long wavelength infrared (VLWIR), while providing high quantum efficiency (QE) and low dark current for high-performance applications. In general III-V semiconductors are more robust than their II-VI counterparts due to stronger, less ionic chemical bonding. III-V semiconductor-based infrared focal plane arrays (FPAs) excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability. InGaAs FPAs with λ_(cutoff) ∼1.7 μm perform at near theoretical limit and dominates the SWIR FPA market. Despite a significantly lower operating temperature than MCT, InSb FPAs (Λ_(cutoff) ∼5.3 μm) dominate the mid-wavelength infrared (MWIR) market in volume due to superior manufacturability and lower cost. The limitation for traditional bulk III-V semiconductor detectors grown on (nearly) lattice-matched substrates is the lack of broad cutoff wavelength adjustability.

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Additional Information:© 2018 IEEE. The author thanks his JPL collaborators, and S. Bandara, X. Cartoixà, E. S. Daniel, R. E. DeWames, A. D’Souza, M. A. Kinch, M. B. Reine, D. R. Rhiger, J. N. Schulman, D. L. Smith, and W. E. Tennant for helpful discussions. The research described in this publication was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.
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Record Number:CaltechAUTHORS:20181115-140305612
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Official Citation:D. Z. Ting, "III-V Semiconductor Unipolar Barrier Infrared Detectors," 2018 IEEE Photonics Conference (IPC), Reston, VA, USA, 2018, pp. 1-2. doi: 10.1109/IPCon.2018.8527160
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:90926
Deposited By: Tony Diaz
Deposited On:15 Nov 2018 22:09
Last Modified:16 Nov 2021 03:36

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