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GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study

Saive, Rebecca and Emmer, Hal and Chen, Christopher T. and Zhang, Chaomin and Honsberg, Christiana and Atwater, Harry (2018) GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study. In: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE , Piscataway, NJ, pp. 2064-2069. ISBN 9781538685297. https://resolver.caltech.edu/CaltechAUTHORS:20181210-140401770

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Abstract

We report on an study of the GaP/Si interface for application in silicon heterojunction solar cells. We analyzed the band alignment using X-ray photoelectron spectroscopy (XPS) and cross-sectional Kelvin probe force microscopy (x-KPFM). Our measurements show a high conduction band offset (0.9 eV) leading to a barrier in electron extraction which we microscopically resolved via x-KPFM. XPS reveals the presence of Si-Ga bonds which explains the observed interface dipole that leads to low open circuit voltage and low fill factor in GaP/Si heterojunction solar cells. Furthermore, we investigated the electronic and morphologic changes in GaP upon Si and Mg doping.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/pvsc.2018.8547704DOIArticle
ORCID:
AuthorORCID
Saive, Rebecca0000-0001-7420-9155
Chen, Christopher T.0000-0001-5848-961X
Atwater, Harry0000-0001-9435-0201
Additional Information:© 2018 IEEE. The authors acknowledge the Molecular Foundry for generously hosting the MOCVD growth and the Caltech MMRC for providing the XPS analytic tools. We thank Laura Ding, Shaul Aloni, Adam Nielander, Noah Plymale, Amanda Shing and Lars Korte for helpful advice with measurements and data interpretation. The information, data, or work presented herein was funded in part by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE-EE0006335 for band offset characterization and EEC1041895 for other electrical and structural measurements. Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-EE0006335
NSFEEC-1041895
Department of Energy (DOE)DE-AC02-05CH11231
Subject Keywords:Silicon heterojunction, Gallium Phosphide, band alignment, doping, morphology
Record Number:CaltechAUTHORS:20181210-140401770
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20181210-140401770
Official Citation:R. Saive, H. Emmer, C. T. Chen, C. Zhang, C. Honsberg and H. Atwater, "GaP/Si Heterojunction Solar Cells: An Interface, Doping and Morphology Study," 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Waikoloa Village, HI, USA, 2018, pp. 2064-2069. doi: 10.1109/PVSC.2018.8547704
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:91654
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:10 Dec 2018 23:13
Last Modified:03 Oct 2019 20:37

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