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Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

Varonen, Mikko and Cleary, Kieran and Karaca, Denizhan and Halonerr, Kari A. I. (2018) Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier. In: 2018 IEEE/MTT-S International Microwave Symposium. IEEE , Piscataway, NJ, pp. 1503-1506. ISBN 978-1-5386-5067-7.

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In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.

Item Type:Book Section
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Additional Information:© 2018 IEEE. The work of M. Varonen was supported through the Academy of Finland under Academy Research Fellow project MIDERI.
Funding AgencyGrant Number
Academy of FinlandMIDERI
Subject Keywords:CMOS, Cryogenic, low-noise amplifiers, MMIC
Record Number:CaltechAUTHORS:20181212-160922767
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Official Citation:M. Varonen, K. Cleary, D. Karaca and K. A. I. Halonerr, "Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier," 2018 IEEE/MTT-S International Microwave Symposium - IMS, Philadelphia, PA, 2018, pp. 1503-1506. doi: 10.1109/MWSYM.2018.8439505
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:91747
Deposited By: Tony Diaz
Deposited On:13 Dec 2018 18:24
Last Modified:16 Nov 2021 03:44

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