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Ultralow-threshold Yb3+:SiO2 glass laser fabricated by the solgel process

Ostby, Eric P. and Yang, Lan and Vahala, Kerry J. (2007) Ultralow-threshold Yb3+:SiO2 glass laser fabricated by the solgel process. Optics Letters, 32 (18). pp. 2650-2652. ISSN 0146-9592.

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A Yb-doped silica microcavity laser on a silicon chip is fabricated from a solgel thin film. The high-Q microtoroid cavity, which has a finesse of 10,000, is evanescently coupled to an optical fiber taper. We report a threshold of 1.8 μW absorbed power that is, to the best of our knowledge, the lowest published threshold to date for any Yb-doped laser. The effect of Yb3+ concentration on laser threshold is experimentally quantified.

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Vahala, Kerry J.0000-0003-1783-1380
Additional Information:© 2007 Optical Society of America. Received July 5, 2007; accepted July 25, 2007; posted August 3, 2007 (Doc. ID 84873); published September 4, 2007. This work was financially supported by MURI grant FA9550-04-1-0434 and the Defense Advanced Research Projects Agency (DARPA) Center for Optofluidic Integration.
Issue or Number:18
Record Number:CaltechAUTHORS:OSTol07
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Official Citation:E. P. Ostby, L. Yang, and K. J. Vahala, "Ultralow-threshold Yb3+:SiO2 glass laser fabricated by the solgel process," Opt. Lett. 32, 2650-2652 (2007)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9176
Deposited By: Archive Administrator
Deposited On:09 Nov 2007
Last Modified:09 Mar 2020 13:19

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