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Stacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers

Defrance, F. and Chattopadhyay, G. and Connors, J. and Golwala, S. and Hollister, M. I. and Jung-Kubiak, C. and Padilla, E. and Radford, S. and Sayers, J. and Tong, E. C. and Yoshida, H. (2018) Stacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers. . (Submitted)

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Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silicon surfaces, are developed for millimeter and submillimeter wavelengths. Single and double layer AR coatings were designed for an optimal transmission centered on 250 GHz, and fabricated using the DRIE (Deep Reaction Ion Etching) technique. Tests of high resistivity silicon wafers with single-layer coatings between 75 GHz and 330 GHz are presented and compared with the simulations.

Item Type:Report or Paper (Discussion Paper)
Related URLs:
URLURL TypeDescription Paper
Defrance, F.0000-0002-3746-5296
Chattopadhyay, G.0000-0001-7942-5025
Golwala, S.0000-0002-1098-7174
Sayers, J.0000-0002-8213-3784
Additional Information:This work was funded by NASA (Grant NNX15AE01G).
Group:Astronomy Department
Funding AgencyGrant Number
Subject Keywords:THz, GHz, metasurface, anti-reflection, coating, DRIE, silicon, multilayer, optics
Record Number:CaltechAUTHORS:20190107-095816933
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:92106
Deposited By: Tony Diaz
Deposited On:07 Jan 2019 18:34
Last Modified:09 Mar 2020 13:19

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